FMMT459

FMMT459 500V Silicon NPN high voltage switching transistor Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in high efficiency Telecom and protected line switching applications. Features ■ 6V reverse blocking capability ■ Low saturation voltage - 90mV @ 50mA ■ Hfe 50 @ 30 mA ■ IC=150mA continuous ■ SOT23 package with Ptot 625mW ■ Specification can be supplied in other package outlines Applications ■ Electronic test equipment ■ Offline switching circuits ■ Piezo actuators ■ RCD circuits Ordering information Device FMMT459TA FMMT459TC Reel size (inches) 7 13 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 Pin out - top view Device marking 459 Issue 5 - August 2005 © Zetex Semiconductors plc 2005 1 www.zetex.com FMMT459 Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Emitter-collector voltage Peak pulse current Continuous collector current* Base current Power dissipation @ TA=25°C* Linear derating factor Power dissipation @ TA=25°C† Linear derating factor Operating and storage temperature range Symbol VCBO VCEV VCEO VEBO VECV ICM IC IB PD Limit 500 500 450 6 6 0.5 0.15 0.2 625 5 806 6.4 -55 to +150 Unit V V V V V A A A mW mW/°C mW mW/°C °C PD Tj:Tstg Thermal resistance Parameter Junction to ambient* Junction to ambient† Symbol R JA R JA Value 200 155 Unit °C/W °C/W NOTES: * For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions † as above measured at t VBE > -1V IC = 10mA* IE = 100 A IC = 1 A, 0.3V > VBC > -6V VCE=450V VCB=450V VEB=5V IC = 30mA, VCE = 10V IC = 50mA*, VCE = 10V 75 90 0.9 0.9 mV mV V V MHz 5 113 3450 PF ICES ICBO IEBO HFE VCE(sat) 50 120 70 60 70 VBE(sat) VBE(on) fT Cobo t(ON) t(OFF) 50 0.76 0.71 100 100 100 nA nA nA IC = 20mA, IB = 2mA* IC = 50mA, IB = 6mA* IC = 50mA, IB = 5mA* IC = 50mA, VCE = 10V* IC = 10mA, VCE = 20V f = 20MHZ VCB = 20V, f = 1MHZ IC = 50mA, VC = 100V IB1 = 5mA, IB2 = 10mA IC = 50mA, VC = 100V IB1 = 5mA, IB2 = 10mA ns ns NOTES: * Measured under pulsed conditions. Pulse width = 300 s; duty cycle