FMMT489

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE3 - OCTOBER 1995 7 FEATURES * Very low equivalent on-resistance; RCE(sat) 175mΩ at 1A FMMT489 E C COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT589 489 B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE 100 100 60 20 150 10 MIN. 50 30 5 100 100 100 0.3 0.6 1.1 1.0 300 MHz pF SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg MAX. VALUE 50 30 5 1 4 200 500 -55 to +150 UNIT V V V nA nA nA V V V V UNIT V V V A A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=30V VCES=30V VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=1mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=4A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMT449 datasheet 3 - 114