FMMT491

FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC(cont) = 1A PD = 500mW RCE(sat) = 160m at 1A Complementary part number : FMMT591 Description Medium power planar NPN bipolar transistor. C Features • • VCE(sat) maximum specification improvement Reverse blocking specification improvement B E Applications • • • MOSFET gate driving Power switches Motor control E C B Tape width (mm) 8 Quantity per reel 3000 Ordering information Device FMMT491TA Reel size (inches) 7 Pinout - top view Device marking 491 Issue 5 - November 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com FMMT491 Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Peak pulse current Power dissipation at TA =25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCE0 VEBO IC ICM PD Limit 80 60 7 1 2 500 4 -55 to 150 Unit V V V A A mW mW/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R JA Value 250 Unit °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 5 - November 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com FMMT491 Characteristics Issue 5 - November 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com FMMT491 Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. 80 60 7 8.1