FMMT493

FMMT493 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE – 7 FMMT593 493 FMMT493 E TYPICAL CHARACTERISTICS 0. 4 PARTMARKING DETAIL – C B +25 ° C 0. 4 I+/I*=10 0. 3 0. 3 -(V) t) a s( E C 0. 2 I+/I*=10 I+/I*=50 -(V) t) as ( E C -55 ° C +25 ° C +100 ° C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg MIN. 120 100 5 100 100 100 0.3 0.6 1.15 1.0 100 100 60 20 150 10 300 MHz pF MAX. VALUE 120 100 5 1 2 200 500 -55 to +150 UNIT V V V nA nA nA V V V V SOT23 UNIT V V V A A mA mW °C 0. 2 V V 10m A 10 0m A 1A 10A 0. 1 0. 1 0 1m A 0 1m A 10m A 10 0m A 1A 10A IC -Collector Current VCE(sat) v IC IC -Collector Current VCE(sat) v IC 280 V+-=10V +100 ° C +25 ° C 1. 0 I+/I*=10 240 - Typical Gain 200 0. 8 16 0 - (V) 120 t) a (s E B 0. 6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -55 ° C +25 ° C +100 ° C PARAMETER Breakdown Voltages SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=100V VCES=100V VEB=4V IC=500mA, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=1A, VCE=10V IC=1mA, VCE=10V* IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz E 80 -55 ° C 0. 4 h F V 40 0. 2 0 1m A 10m A 100m A 1A 10A 0 1m A 10 mA 10 0m A 1A 10 A IC -Collector Current IC -Collector Current hFE V IC V+-=10V 1. 0 10 VBE(sat) v IC Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Saturation Voltages ICBO ICES IEBO VCE(sat) VBE(sat) I -Collector Current (A) 0.8 1 - (V) -55 ° C 0.6 ) n o( E B +25 °C +100 °C 0. 1 0.4 0.0 1 0.2 C DC 1s 100ms 10ms 1ms 100µs Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio 1 10 100 VBE(on) hFE V 0 1m A 10m A 100 mA 1A 10 A 0. 001 0. 1 IC -Collector Current VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area Transition Frequency Collector-Base Breakdown Voltage fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 120 3 - 119 FMMT493 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE – 7 FMMT593 493 FMMT493 E TYPICAL CHARACTERISTICS 0. 4 PARTMARKING DETAIL – C B +25 ° C 0. 4 I+/I*=10 0. 3 0. 3 -(V) t) a s( E C 0. 2 I+/I*=10 I+/I*=50 -(V) t) as ( E C -55 ° C +25 ° C +100 ° C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg MIN. 120 100 5 100 100 100 0.3 0.6 1.15 1.0 100 100 60 20 150 10 300 MHz pF MAX. VALUE 120 100 5 1 2 200 500 -55 to +150 UNIT V V V nA nA nA V V V V SOT23 UNIT V V V A A mA mW °C 0. 2 V V 10m A 10 0m A 1A 10A 0. 1 0. 1 0 1m A 0 1m A 10m A 10 0m A 1A 10A IC -Collector Current VCE(sat) v IC IC -Collector Current VCE(sat) v IC 280 V+-=10V +100 ° C +25 ° C 1. 0 I+/I*=10 240 - Typical Gain 200 0. 8 16 0 - (V) 120 t) a (s E B 0. 6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -55 ° C +25 ° C +100 ° C PARAMETER Breakdown Voltages SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=100V VCES=100V VEB=4V IC=500mA, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=1A, VCE=10V IC=1mA, VCE=10V* IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz E 80 -55 ° C 0. 4 h F V 40 0. 2 0 1m A 10m A 100m A 1A 10A 0 1m A 10 mA 10 0m A 1A 10 A IC -Collector Current IC -Collector Current hFE V IC V+-=10V 1. 0 10 VBE(sat) v IC Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Saturation Voltages ICBO ICES IEBO VCE(sat) VBE(sat) I -Collector Current (A) 0.8 1 - (V) -55 ° C 0.6 ) n o( E B +25 °C +100 °C 0. 1 0.4 0.0 1 0.2 C DC 1s 100ms 10ms 1ms 100µs Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio 1 10 100 VBE(on) hFE V 0 1m A 10m A 100 mA 1A 10 A 0. 001 0. 1 IC -Collector Current VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area Transition Frequency Collector-Base Breakdown Voltage fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 120 3 - 119