FMMT551

FMMT551 TYPICAL CHARACTERISTICS 100 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current FMMT551 C E - Normalised Gain (%) -0.8 80 - (Volts) -0.6 60 COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT451 551 B -0.4 I+/I*=10 -0.2 40 V 20 ABSOLUTE MAXIMUM RATINGS. PARAMETER -0.01 -0.1 -1 -10 SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. UNIT V V V -0.1 -0.1 -0.35 -1.1 50 10 150 25 150 MHz pF µA µA VALUE -80 -60 -5 -2 -1 -200 500 -55 to +200 CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-60V VEB=-4V UNIT V V V A A mA mW °C h 0 -0.01 -0.1 -1 -10 -0.001 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC -1.4 -1.0 Power Dissipation at Tamb=25°C Operating and Storage Temperature Range - (Volts) - (Volts) -1.2 -0.9 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage -0.01 -0.1 -1 -10 -1.0 -0.8 SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO I CBO IEBO VCE(sat) VBE(sat) hFE fT Cobo MIN. -80 -60 -5 V V -0.8 -0.7 -0.6 -0.01 -0.1 -1 -10 -0.6 Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage I+ - Collector Current (Amps) I+ - Collector Current (Amps) VBE(on) v IC 10 VBE(sat) v IC V V IC=-150mA, IB=-15mA* IC=-150mA, IB=-15mA* IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz 1 DC 1s 100ms 10ms 1ms 100µs Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio 10V 100V 0.1 0.01 0.1V 1V Transition Frequency Output Capacitance VCE - Collector Emitter Voltage (V) Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 130 3 - 129 FMMT551 TYPICAL CHARACTERISTICS 100 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current FMMT551 C E - Normalised Gain (%) -0.8 80 - (Volts) -0.6 60 COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT451 551 B -0.4 I+/I*=10 -0.2 40 V 20 ABSOLUTE MAXIMUM RATINGS. PARAMETER -0.01 -0.1 -1 -10 SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. UNIT V V V -0.1 -0.1 -0.35 -1.1 50 10 150 25 150 MHz pF µA µA VALUE -80 -60 -5 -2 -1 -200 500 -55 to +200 CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-60V VEB=-4V UNIT V V V A A mA mW °C h 0 -0.01 -0.1 -1 -10 -0.001 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC -1.4 -1.0 Power Dissipation at Tamb=25°C Operating and Storage Temperature Range - (Volts) - (Volts) -1.2 -0.9 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage -0.01 -0.1 -1 -10 -1.0 -0.8 SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO I CBO IEBO VCE(sat) VBE(sat) hFE fT Cobo MIN. -80 -60 -5 V V -0.8 -0.7 -0.6 -0.01 -0.1 -1 -10 -0.6 Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage I+ - Collector Current (Amps) I+ - Collector Current (Amps) VBE(on) v IC 10 VBE(sat) v IC V V IC=-150mA, IB=-15mA* IC=-150mA, IB=-15mA* IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz 1 DC 1s 100ms 10ms 1ms 100µs Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio 10V 100V 0.1 0.01 0.1V 1V Transition Frequency Output Capacitance VCE - Collector Emitter Voltage (V) Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 130 3 - 129