FMMT558

FMMT558 TYPICAL CHARACTERISTICS 1.6 1.4 IC/IB =20 IC/IB =10 1.6 1.4 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 FMMT558 E C B IC/IB =50 -55°C +25°C +100°C +175°C IC/IB =10 - (Volts) 1.2 1.0 0.8 0.6 - (Volts) 1.2 1.0 0.8 0.6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage 0.01 0.1 1 10 20 SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. VALUE -400 -400 -5 -500 -150 -200 500 -55 to +150 UNIT V V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA UNIT V V V mA mA mA mW °C V 0.4 0.2 0 0.001 0.01 0.1 1 10 20 V 0.4 0.2 0 0.001 Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain - Typical Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE =10V 1.6 300 1.4 -55°C +25°C +100°C +175°C IC/IB =10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO VBR(CEO) V(BR)EBO ICBO ; ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 100 100 15 50 5 95 1600 -400 -400 -5 -100 -100 -0.2 -0.5 -0.9 -0.9 300 MHz pF ns ns - (Volts) V 1.2 1.0 0.8 0.6 200 h 100 h 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency nA nA V V V V VCB=-320V; V+-=320V VEB=-4V IC=-20mA, IB=-2mA * IC=-50mA, IB=-6mA * IC=-50mA, IB=-5mA * IC=-50mA, VCE=-10V * IC=-1mA, VCE =-10V IC=-50mA, VCE =-10V * IC=-100mA, VCE =-10V* IC=-10mA, VCE =-20V f=20MHz VCB =-20V, f=1MHz IC=-50mA, VCE =-100V IB1=5mA, IB2=-10mA hFE v IC 1 VCE =10V VBE(sat) v IC 1.6 1.4 -55°C +25°C +100°C +175°C - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.1 DC 1s 100ms 10ms 1ms 100µs V 0.01 0.001 1V 10V 100V 1000V Collector-Base Breakdown Voltage Switching times I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 133 3 - 134 FMMT558 TYPICAL CHARACTERISTICS 1.6 1.4 IC/IB =20 IC/IB =10 1.6 1.4 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 FMMT558 E C B IC/IB =50 -55°C +25°C +100°C +175°C IC/IB =10 - (Volts) 1.2 1.0 0.8 0.6 - (Volts) 1.2 1.0 0.8 0.6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage 0.01 0.1 1 10 20 SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. VALUE -400 -400 -5 -500 -150 -200 500 -55 to +150 UNIT V V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA UNIT V V V mA mA mA mW °C V 0.4 0.2 0 0.001 0.01 0.1 1 10 20 V 0.4 0.2 0 0.001 Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain - Typical Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE =10V 1.6 300 1.4 -55°C +25°C +100°C +175°C IC/IB =10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO VBR(CEO) V(BR)EBO ICBO ; ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 100 100 15 50 5 95 1600 -400 -400 -5 -100 -100 -0.2 -0.5 -0.9 -0.9 300 MHz pF ns ns - (Volts) V 1.2 1.0 0.8 0.6 200 h 100 h 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency nA nA V V V V VCB=-320V; V+-=320V VEB=-4V IC=-20mA, IB=-2mA * IC=-50mA, IB=-6mA * IC=-50mA, IB=-5mA * IC=-50mA, VCE=-10V * IC=-1mA, VCE =-10V IC=-50mA, VCE =-10V * IC=-100mA, VCE =-10V* IC=-10mA, VCE =-20V f=20MHz VCB =-20V, f=1MHz IC=-50mA, VCE =-100V IB1=5mA, IB2=-10mA hFE v IC 1 VCE =10V VBE(sat) v IC 1.6 1.4 -55°C +25°C +100°C +175°C - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.1 DC 1s 100ms 10ms 1ms 100µs V 0.01 0.001 1V 10V 100V 1000V Collector-Base Breakdown Voltage Switching times I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 133 3 - 134