FMMT591TA

FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC(cont) = -1A PD = 500mW RCE(sat) = 295m at 1A Complementary part number : FMMT491 Description Medium power planar PNP bipolar transistor. C Features • • VCE(sat) maximum specification reduction Reverse blocking specification improvement B E Applications • • • MOSFET gate driving Power switches Motor control E C B Tape width (mm) 8 Quantity per reel 3000 Ordering information Device FMMT591TA Reel size (inches) 7 Pinout - top view Device marking 591 Issue 4 - September 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com FMMT591 Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Peak pulse current Power dissipation at TA =25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VEBO IC ICM PD Limit -80 -60 -7 -1 -2 500 4 -55 to 150 Unit V V V A A mW mW/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R JA Value 250 Unit °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 4 - September 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com FMMT591 Characteristics Issue 4 - September 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com FMMT591 Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. -80 -60 -7 -8.1