FMMT593

FMMT593 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 7 FMMT593 C B E TYPICAL CHARACTERISTICS 0.4 0.3 0.2 0.1 0 +* I+/I*=50 I /I =10 +25 ° C 0.4 0.3 0.2 0.1 0 I /I =10 )* -55 °C +25 °C +100 °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER -55 °C +25 °C +100 °C SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -120 -100 -5 -2 -1 -200 500 -55 to +150 UNIT V V V A A mA mW °C 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Collector Current VCE(sat) v IC 400 300 200 100 IC-Collector Current VCE(sat) v IC V +-=5V 1.0 0.8 0.6 0.4 I /I =10 +* +100 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) DC 1s 100ms 10ms 1ms 100 s MAX. UNIT CONDITIONS. V V V -100 -100 -100 -0.2 -0.3 -1.1 -1.0 nA nA nA V V V V IC=-100µ A IC=-10mA* IE=-100µ A VCB=-100V VEB=-4V VCES=-100V IC=-250mA,IB=-25mA* IC=-500mA IB=-50mA* IC=-500mA,IB=-50mA* IC=-1mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-250mA,VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V, MHz IC=-50mA, VCE=-10V f=100MHz 5 pF VCB=-10V, f=1MHz +25 °C Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage -120 -100 -5 -55 °C 0.2 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A 10A 0 1mA IC-Collector Current hFE V IC 10 1 0.1 -55 °C +25 °C +100 °C IC-Collector Current VBE(sat) v IC Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Emitter Saturation Voltages V +-=5V 1.0 0.8 0.6 0.4 0.2 0 1mA 10mA 100mA 1A 10A Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio VBE(on) hFE 100 100 100 50 50 0.01 0.001 0.1V µ 300 IC-Collector Current VCE - Collector Emitter Voltage (V) 1V 10V 100V Transition Frequency Output Capacitance fT Cobo VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 142 3 - 141 FMMT593 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 7 FMMT593 C B E TYPICAL CHARACTERISTICS 0.4 0.3 0.2 0.1 0 +* I+/I*=50 I /I =10 +25 ° C 0.4 0.3 0.2 0.1 0 I /I =10 )* -55 °C +25 °C +100 °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER -55 °C +25 °C +100 °C SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -120 -100 -5 -2 -1 -200 500 -55 to +150 UNIT V V V A A mA mW °C 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Collector Current VCE(sat) v IC 400 300 200 100 IC-Collector Current VCE(sat) v IC V +-=5V 1.0 0.8 0.6 0.4 I /I =10 +* +100 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) DC 1s 100ms 10ms 1ms 100 s MAX. UNIT CONDITIONS. V V V -100 -100 -100 -0.2 -0.3 -1.1 -1.0 nA nA nA V V V V IC=-100µ A IC=-10mA* IE=-100µ A VCB=-100V VEB=-4V VCES=-100V IC=-250mA,IB=-25mA* IC=-500mA IB=-50mA* IC=-500mA,IB=-50mA* IC=-1mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-250mA,VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V, MHz IC=-50mA, VCE=-10V f=100MHz 5 pF VCB=-10V, f=1MHz +25 °C Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage -120 -100 -5 -55 °C 0.2 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A 10A 0 1mA IC-Collector Current hFE V IC 10 1 0.1 -55 °C +25 °C +100 °C IC-Collector Current VBE(sat) v IC Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Emitter Saturation Voltages V +-=5V 1.0 0.8 0.6 0.4 0.2 0 1mA 10mA 100mA 1A 10A Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio VBE(on) hFE 100 100 100 50 50 0.01 0.001 0.1V µ 300 IC-Collector Current VCE - Collector Emitter Voltage (V) 1V 10V 100V Transition Frequency Output Capacitance fT Cobo VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 142 3 - 141