FMMT597

FMMT597 TYPICAL CHARACTERISTICS 0.6 0.4 0.4 0.3 0.2 0.1 0 1mA 10mA 100mA 1A I+/I*=10 I+/I*=50 +25°C 0.6 0.5 0.4 0.3 0.2 0.1 0 1mA 10mA 100mA 1A I+/I*=10 -55° C +25° C +100° C SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 COMPLEMENTARY TYPE FMMT497 PARTMARKING DETAIL - 597 FMMT597 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage IC-Collector Current VCE(sat) v IC SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -300 -300 -5 -1 -0.2 -200 500 -55 to +150 UNIT V V V A A mA mW °C IC-Collector Current VCE(sat) v IC Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range 320 240 160 80 V+-=10V +100° C 0.9 0.8 0.6 I+/I*=10 +25° C -55° C 0.4 0.2 0 -55° C +25° C +100° C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage VBE(on) hFE fT Cobo 100 100 100 75 10 -300 -300 -5 -100 -100 -100 -0.25 -0.25 -1.0 -0.85 300 MAX. UNIT CONDITIONS. V V V nA nA nA V V V V IC=-100µ A IC=-10mA* IE=-100µ A VCB=-250V VEB=-4V VCES=-250V IC=-50mA, IB=-5mA IC=-100mA, IB=-20mA* IC=-100mA, IB=-20mA* IC=-100mA,VCE=-10V* IC=-1mA, VCE=-10V IC=-50mA,VCE=-10V* IC=-100mA,VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz 0 1mA 10mA 100mA 1A 1mA 10mA 100mA 1A IC-Collector Current hFE V IC 1 IC-Collector Current VBE(sat) v IC Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Emitter Saturation Voltages 0.9 V+-=10V 0.8 0.6 0.4 0.2 0 -55° C +25° C +100° C 0.1 DC 1s 100ms 10ms 1ms 100µs 10 100 1000 0.01 1mA 10mA 100mA 1A 0.001 1 Static Forward Current Transfer Ratio Transition Frequency Output Capacitance IC-Collector Current VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 146 3 - 145 FMMT597 TYPICAL CHARACTERISTICS 0.6 0.4 0.4 0.3 0.2 0.1 0 1mA 10mA 100mA 1A I+/I*=10 I+/I*=50 +25°C 0.6 0.5 0.4 0.3 0.2 0.1 0 1mA 10mA 100mA 1A I+/I*=10 -55° C +25° C +100° C SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 COMPLEMENTARY TYPE FMMT497 PARTMARKING DETAIL - 597 FMMT597 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage IC-Collector Current VCE(sat) v IC SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -300 -300 -5 -1 -0.2 -200 500 -55 to +150 UNIT V V V A A mA mW °C IC-Collector Current VCE(sat) v IC Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range 320 240 160 80 V+-=10V +100° C 0.9 0.8 0.6 I+/I*=10 +25° C -55° C 0.4 0.2 0 -55° C +25° C +100° C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage VBE(on) hFE fT Cobo 100 100 100 75 10 -300 -300 -5 -100 -100 -100 -0.25 -0.25 -1.0 -0.85 300 MAX. UNIT CONDITIONS. V V V nA nA nA V V V V IC=-100µ A IC=-10mA* IE=-100µ A VCB=-250V VEB=-4V VCES=-250V IC=-50mA, IB=-5mA IC=-100mA, IB=-20mA* IC=-100mA, IB=-20mA* IC=-100mA,VCE=-10V* IC=-1mA, VCE=-10V IC=-50mA,VCE=-10V* IC=-100mA,VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz 0 1mA 10mA 100mA 1A 1mA 10mA 100mA 1A IC-Collector Current hFE V IC 1 IC-Collector Current VBE(sat) v IC Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Emitter Saturation Voltages 0.9 V+-=10V 0.8 0.6 0.4 0.2 0 -55° C +25° C +100° C 0.1 DC 1s 100ms 10ms 1ms 100µs 10 100 1000 0.01 1mA 10mA 100mA 1A 0.001 1 Static Forward Current Transfer Ratio Transition Frequency Output Capacitance IC-Collector Current VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 146 3 - 145