FMMT618

SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS ISSUE 3 - NOVEMBER 1995 FEATURES FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 * * * * * * 625mW POWER DISSIPATION IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ. Extremely Low Equivalent On Resistance; RCE(sat) C B E DEVICE TYPE FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 COMPLEMENT FMMT717 FMMT718 FMMT720 FMMT723 – PARTMARKING 617 618 619 624 625 RCE(sat) 50mΩ at 3A 50mΩ at 2A 75mΩ at 2A - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot FMMT FMMT FMMT FMMT FMMT 617 618 619 624 625 15 15 5 12 3 20 20 5 6 2.5 50 50 5 6 2 500 625 -55 to +150 125 125 5 3 1 150 150 5 3 1 UNIT V V V A A mA mW °C Operating and Storage Temperature Tj:Tstg Range * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices 3 - 149 FMMT617 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 15 15 5 TYP. 70 18 8.2 100 100 100 8 70 150 0.9 0.84 200 300 200 150 80 415 450 320 240 80 120 30 120 160 40 MHz pF ns ns 14 100 200 1.0 1.0 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=10V VEB=4V VCES=10V IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=50mA* IC=3A, IB=50mA* IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE=2V* IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz VCC=10V, IC=3A IB1=IB2=50mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 100A 0.01 0.1 1.0 -55°C 25°C 100°C V+-=2V FMMT617 TYPICAL CHARACTERISTICS 1 +25 °C 0.4 I+/I*=60 100m 0.3 0.2 10m I+/I*=100 I+/I*=60 I+/I*=10 0.1 0.0 1mA 100°C 25°C -55°C 1m 1m 10m 100m 1 10 Emitter Cut-Off Current IEBO Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage ICES VCE(sat) 10mA 100mA 1A 10A 100A IC - Collector Current (A) Collector Current VCE(SAT) v IC VCE(SAT) vs IC 1.2 1.0 0.8 0.6 0.4 0.2 100°C V+-=2V 1.4 450 1.2 1.0 0.8 I+/I*=60 VBE(sat) VBE(on) 25°C -55°C 25°C 100°C -55°C 225 0.6 0.4 0.2 Static Forward Current hFE Transfer Ratio 0.0 1mA 10mA 100mA 1A 10A 0 100A 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current Collector Current Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) hFE vs IC VBE(SAT) vs IC SINGLE PULSE TEST Tamb = 25 deg C 10 1.0 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 0.1 D.C. 1s 100ms 10ms 1ms 100µs 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 150 3 - 151 FMMT617 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 15 15 5 TYP. 70 18 8.2 100 100 100 8 70 150 0.9 0.84 200 300 200 150 80 415 450 320 240 80 120 30 120 160 40 MHz pF ns ns 14 100 200 1.0 1.0 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=10V VEB=4V VCES=10V IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=50mA* IC=3A, IB=50mA* IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE=2V* IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz VCC=10V, IC=3A IB1=IB2=50mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 100A 0.01 0.1 1.0 -55°C 25°C 100°C V+-=2V FMMT617 TYPICAL CHARACTERISTICS 1 +25 °C 0.4 I+/I*=60 100m 0.3 0.2 10m I+/I*=100 I+/I*=60 I+/I*=10 0.1 0.0 1mA 100°C 25°C -55°C 1m 1m 10m 100m 1 10 Emitter Cut-Off Current IEBO Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage ICES VCE(sat) 10mA 100mA 1A 10A 100A IC - Collector Current (A) Collector Current VCE(SAT) v IC VCE(SAT) vs IC 1.2 1.0 0.8 0.6 0.4 0.2 100°C V+-=2V 1.4 450 1.2 1.0 0.8 I+/I*=60 VBE(sat) VBE(on) 25°C -55°C 25°C 100°C -55°C 225 0.6 0.4 0.2 Static Forward Current hFE Transfer Ratio 0.0 1mA 10mA 100mA 1A 10A 0 100A 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current Collector Current Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) hFE vs IC VBE(SAT) vs IC SINGLE PULSE TEST Tamb = 25 deg C 10 1.0 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 0.1 D.C. 1s 100ms 10ms 1ms 100µs 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 150 3 - 151 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158