FMMT6520

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - NOVEMBER 1995 FEATURES * 350 Volt VCEO * Gain of 15 at IC=-100mA 7 FMMT6520 E C B APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE FMMT6517 PARTMARKING DETAIL – 520 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICBO IEBO VCE(sat) MIN. -350 -350 -5 -50 -50 -0.3 -0.35 -0.5 -1.0 -0.75 -0.85 -0.90 -2.0 20 30 30 20 15 50 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg MAX. UNIT V V V nA nA V V V V V V V V VALUE -350 -350 -5 -500 330 -55 to +150 CONDITIONS. IC=-100µA, IE=0 IC=-1mA, IB=0* IE=-10µA, IC=0 VCB=-250V, IE=0 VEB=-3V, IC=0 IC=-10mA, IB=-1mA* IC=-20mA, IB=-2mA* IC=-30mA, IB=-3mA* IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA* IC=-20mA, IB=-2mA* IC=-30mA, IB=-3mA* IC=-100mA, VCE=-10V* IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V* IC=-30mA, VCE=-10V* IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* pF MHz VCB=20V, f=1MHz IC=-10mA, VCE=-20V, f=20MHz UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VBE(sat) VBE(on) hFE 200 200 6 Output Capacitance Transition Frequency Cobo fT *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 172