SuperSOT SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS
DIM A B C D F G K L N Millimeters Min Max 2.67 3.05 1.20 1.40 1.10 0.37 0.53 0.085 0.15 NOM 1.9 0.01 0.10 2.10 2.50 NOM 0.95 Inches Min Max 0.105 0.120 0.047 0.055 0.043 0.0145 0.021 0.0033 0.0059 NOM 0.075 0.0004 0.004 0.0825 0.0985 NOM 0.37 ISSUE 3 JUNE 1996 FEATURES
FMMT717 FMMT718 FMMT720 FMMT722 FMMT723
*
* * * * *
625mW POWER DISSIPATION
C B E
IC CONT 2.5A IC Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ. Exhibits extremely low equivalent on-resistance; RCE(sat)
DEVICE TYPE FMMT717 FMMT718 FMMT720 FMMT722 FMMT723
COMPLEMENT FMMT617 FMMT618 FMMT619 FMMT624
PARTMARKING 717 718 720 722 723
RCE(sat) 72mΩ at 2.5A 97mΩ at 1.5A 163mΩ at 1.5A -
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C*
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide ©Zetex plc 1997 Internet: http://www.zetex.com
SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg
FMMT 717 -12 -12 -5 -10 -2.5
FMMT 718 -20 -20 -5 -6 -1.5
FMMT 720 -40 -40 -5 -4 -1.5 -500 625 -55 to +150
FMMT 722 -70 -70 -5 -3 -1.5
FMMT 723 -100 -100 -5 -2.5 -1
UNIT V V V A A mA mW °C
Operating and Storage Temperature Range
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
3 - 159
FMMT717
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -12 -12 -5 TYP. -35 -25 -8.5 -100 -100 -100 -10 -100 -110 -180 -0.9 -0.8 300 300 180 60 45 80 475 450 275 100 70 110 21 70 130 30 MHz pF ns ns -17 -140 -170 -220 -1.0 -1.0 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-10V VEB=-4V VC ES=-10V IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2.5A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-6V, IC=-2A IB1=IB2=50mA
1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 100A 0.01 0.1 1.0
-55°C 25°C 100°C V+-=2V
FMMT717
TYPICAL CHARACTERISTICS
1
+25°C
0.8 0.7 0.6 0.5 0.4
I+/I*=10
100m
10m
I+/I*=100 I+/I*=50 I+/I*=30 I+/I*=10
0.3 0.2 0.1 10 0.0 1mA 10mA
100°C 25°C -55°C
1m 1m
10m
100m
1
100mA
1A
10A
100A
Emitter Cut-Off Current IEBO ICES VCE(sat)
Collector Current (A)
Collector Current
VCE(SAT) vs IC
1.6 1.4 450
25°C
VCE(SAT) vs IC
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
100°C
V+-=2V
I+/I*=10
VBE(sat) VBE(on)
1.2 1.0 0.8
-55°C 25°C 100°C
-55°C
225
0.6 0.4 0.2
Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off)
0.0 1mA
10mA
100mA
1A
10A
0 100A
0.0 1mA
10mA
100mA
1A
10A
100A
Collector Current
Collector Current
hFE vs IC
10
VBE(SAT) vs IC
SINGLE PULSE TEST Tamb = 25 deg C
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
1.0
0.1
D.C. 1s 100ms 10ms 1ms 100µs
10
100
Collector Current
VCE (VOLTS)
VBE(ON) vs IC
Safe Operating Area
3 - 160
3 - 161
FMMT717
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -12 -12 -5 TYP. -35 -25 -8.5 -100 -100 -100 -10 -100 -110 -180 -0.9 -0.8 300 300 180 60 45 80 475 450 275 100 70 110 21 70 130 30 MHz pF ns ns -17 -140 -170 -220 -1.0 -1.0 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-10V VEB=-4V VC ES=-10V IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2.5A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-6V, IC=-2A IB1=IB2=50mA
1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 100A 0.01 0.1 1.0
-55°C 25°C 100°C V+-=2V
FMMT717
TYPICAL CHARACTERISTICS
1
+25°C
0.8 0.7 0.6 0.5 0.4
I+/I*=10
100m
10m
I+/I*=100 I+/I*=50 I+/I*=30 I+/I*=10
0.3 0.2 0.1 10 0.0 1mA 10mA
100°C 25°C -55°C
1m 1m
10m
100m
1
100mA
1A
10A
100A
Emitter Cut-Off Current IEBO ICES VCE(sat)
Collector Current (A)
Collector Current
VCE(SAT) vs IC
1.6 1.4 450
25°C
VCE(SAT) vs IC
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
100°C
V+-=2V
I+/I*=10
VBE(sat) VBE(on)
1.2 1.0 0.8
-55°C 25°C 100°C
-55°C
225
0.6 0.4 0.2
Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off)
0.0 1mA
10mA
100mA
1A
10A
0 100A
0.0 1mA
10mA
100mA
1A
10A
100A
Collector Current
Collector Current
hFE vs IC
10
VBE(SAT) vs IC
SINGLE PULSE TEST Tamb = 25 deg C
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
1.0
0.1
D.C. 1s 100ms 10ms 1ms 100µs
10
100
Collector Current
VCE (VOLTS)
VBE(ON) vs IC
Safe Operating Area
3 - 160
3 - 161
FMMT617 FMMT624 FMMT618 FMMT625 FMMT619
SuperSOT Series
FMMT717 FMMT722 FMMT718 FMMT723 FMMT720
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
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