FMMTA56

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – MARCH 2001 FEATURES * Gain of 50 at IC=100mA ✪ FMMTA56 E C B PARTMARKING DETAIL FMMTA56 - 2G FMMTA56R - MB SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO IC P tot T j :T stg FMMTA56 -80 -80 -4 -500 330 -55 to +150 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMTA56 PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-Off Current Collector-Base Cut-Off Current Static Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Transition Frequency SYMBOL V (BR)CEO V (BR)EBO I CES I CBO h FE V CE(sat) V BE(on) fT 100 50 50 -0.25 -1.2 V V MHz MIN. -80 -4 -0.1 -0.1 MAX. UNIT V V CONDITIONS. I C=-1mA, I B=0* I E=-100 µ A, I C=0 V CE=-60V V CB=-80V, I E=0 V CB=-60V, I E=0 I C=-10mA, V CE=1V* I C=-100mA, V CE=1V* I C=-100mA, I B=-10mA* I C =-100mA, V CE=-1V* I C=-10mA, V CE=-2V f=100MHz µA µA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% TBA