FMMTA92

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E FMMTA92 E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amb = 2 5°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO IC P tot T j :T stg FMMTA92 -300 -300 -5 -200 330 -55 to +150 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMTA92 PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 25 50 6 MHz pF MIN. -300 -300 -5 -0.25 -0.1 -0.5 -0.9 MAX. UNIT V V V CONDITIONS. I C=-100 µ A, I E=0 I C=-1mA, I B=0* I E=-100 µ A, I C=0 V CB=-200V, I E=0 V CB=-160V, I E=0V EB=-3V, I E=0 I C=-20mA, I B=-2mA* I C=-20mA, I B=-2mA* I C=-1mA, V CE=10V* I C=-10mA, V CE=10V* I C=-30mA,V CE=-10V* I C=-10mA, V CE=-20V f=20MHz V CB=-20V, f=1MHz µA µA µA V V fT C obo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% TBA FMMTA92 TYPICAL CHARACTERISTICS hFE Static Forward Current Transfer Ratio 60 fT Transition Frequency (MHz) 170 150 130 110 90 70 50 30 0.1 1.0 10 100 VCE=20V 50 VCE=10V 40 0.1 1.0 10 100 IC-Collector Current (mA) IC-Collector Current (mA) hFE v IC VCE (sat) Collector-Emitter Saturation Voltage(Volts) fT vs IC 3.0 2.0 IC / IB=10 1.0 0 1.0 10 100 IC-Collector Current (mA) VCE(sat) vs IC TBA