FMMTL717

SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL617 L77 FMMTL717 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE -12 -12 -5 -1.25 -4 -200 -500 -55 to +150 UNIT V V V A A mA mW °C FMMTL717 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. -12 -12 -5 TYP. -35 -25 -8.5 -10 -10 -10 -24 -94 -160 -200 -970 -875 300 300 180 100 50 490 450 275 180 110 205 15 76 149 20 MHz pF ns ns -40 -140 -240 -290 -1100 -1000 MAX. UNIT V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-10V VEB=-4V VCE=-10V IC=-100mA, IB=-10mA* IC=-500mA, IB=-20mA* IC=-1A, IB=-50mA* IC=-1.25A,IB=-50mA IC=-1.25A, IB=-50mA* IC=-1.25A, VCE=-2V* IC=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz IC=-1A, VCC=-10V IB1=IB2=-10mA Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO VCE(sat) Collector Cut-Off Current ICES Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE Transition Frequency Collector-Base Breakdown Voltage Switching times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FMMTL717 TYPICAL CHARACTERISTICS 0.5 +25°C 0.5 IC/IB=10 0.4 0.4 IC/IB=10 IC/IB=20 IC/IB=50 VCE(sat) - (V) VCE(sat) - (V) 0.3 0.2 0.1 0 1m 0.3 0.2 0.1 0 -55°C +25°C +100°C +150°C 10m 100m 1 IC - Collector Current (A) 10 1m 10m 100m 1 10 VCE(sat) v IC IC - Collector Current (A) VCE(sat) v IC 800 VCE=2V +100°C +25°C -55°C 1.2 IC/IB=10 hFE - Typical Gain VBE(sat) - (V) 0.8 400 0.4 -55°C +25°C +100°C +150°C 0 1m 10m 1 100m IC - Collector Current (A) 10 0 1m 10m 100m 1 10 hFE v IC IC - Collector Current (A) VBE(sat) v IC 10 VBE(on) - (V) 1.2 -55°C +25°C +100°C +150°C IC - Collector Current (A) 1.6 VCE=2V 1 0.8 100m 0.4 DC 1s 100ms 10ms 1ms 100µs 0 1m 10m 100m 1 10 10m 0.1 1 10 100 IC - Collector Current (A) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area