FZT1048A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1- FEBRUARY 1997 FEATURES * * * * * * VCEO = 17.5V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A FZT1048A C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C † SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 50 17.5 5 20 5 500 2.5 -55 to +150 UNIT V V V A A mA W °C Operating and Storage Temperature Range † The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches. FZT1048A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VALUE PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current V(BR)CBO 50 TYP. 85 MAX. V IC=100µA IC=100µA* IC=10mA IC=100µA, VEB=1V IE=100µA VCB=35V VEB=4V VCE=35V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=15mA* IC=5A, IB=25mA* IC=5A, IB=25mA* UNIT CONDITIONS. VCES 50 85 V VCEO 17.5 24 V VCEV 50 85 V V(BR)EBO 5 8.7 V ICBO IEBO ICES 0.3 0.3 0.3 10 10 10 nA nA nA Collector-Emitter Saturation VCE(sat) Voltage 27 55 155 250 920 45 75 210 350 1000 mV mV mV mV mV Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) 880 970 mV IC=5A, VCE=2V* hFE 280 300 300 180 50 440 450 450 300 80 150 1200 IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* MHz IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=4A, IB=40mA, VCC=10V Transition Frequency fT Output Capacitance Cobo ton 60 120 80 pF ns Switching Times toff 310 ns IC=4A, IB=40mA, VCC=10V FZT1048A TYPICAL CHARACTERISTICS +25°C IC/IB=100 1 0.6 VCE(sat) - (V) VCE(sat) - (V) 0.8 0.6 0.4 0.2 0 1m 10m 100m 1 10 100 IC/IB=200 IC/IB=100 IC/IB=50 0.4 +150°C +100°C +25°C -55°C 0.2 0 1m IC - Collector Current (A) VCE(sat) v IC 10m IC - 100m 1 10 100 Collector Current (A) VCE(sat) v IC 1.2 VCE=2V IC/IB=100 800 1 hFE - Typical Gain VBE(sat) - (V) 600 +100°C +25°C -55°C 0.8 0.6 0.4 0.2 -55°C +25°C +100°C +150°C 400 200 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(sat) v IC 1.5 1.2 100 IC - Collector Current (A) VCE=2V VBE(on) - (V) 10 0.9 0.6 0.3 0 1m 10m IC 100m 1 10 100 -55°C +25°C +100°C +150°C 1 DC 1s 100ms 10ms 1ms 100us 100m 100m 1 10 100 Collector Current (A) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area