PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain
FZT1149A
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C † Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -30 -25 -5 -10 -4 -500 2.5 -55 to +150
SOT223
UNIT V V V A A mA W °C
† The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches x 2 inches
FZT1149A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).
VALUE
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage
SYMBOL MIN. V(BR)CBO VCES VCEO VCEV -30 -25 -25 -25 -5 TYP. -70 -60 -60 -60 -8.5 -0.3 -0.3 -0.3 -45 -100 -140 -170 -230 -960 -860 270 250 195 115 450 400 320 190 50 135 50 150 270 -100 -100 -100 -80 -170 -240 -260 -350 -1050 -1000 MAX.
UNIT V V V V V nA nA nA mV mV mV mV mV mV mV
CONDITIONS. IC=-100µA IC=-100µA IC=-10mA * IC=-100µA, VEB=+1V IE=-100µA VCB=-24V VEB=-4V VCE=-20V IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-3mA* IC=-1A, IB=-7mA* IC=-2A, IB=-30mA* IC=-4A, IB=-140mA* IC=-4A, IB=-140mA* IC=-4A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-5A, VCE=-2V* IC=-10A, VCE=-2V*
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO ICES VCE(sat)
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
800
Transition Frequency Output Capacitance Switching Times
fT Ccb ton toff
MHz pF ns ns
IC=-50mA, VCE=-10V f=50MHz VCB=- 10V, f= 1MHz IC=-4A, IB=-40mA, VCC=-10V IC=-4A, IB=±40mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
FZT1149A
TYPICAL CHARACTERISTICS
1.0
+25°C
1.0
IC/IB=100
0.8
0.8
IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200
VCE(sat) - (V)
VCE(sat) - (V)
0.6
0.6
-55°C +25°C +100°C
0.4
0.4
0.2
0.2
0 1m 10m 100m 1 10 100
0 1m 10m 100m 1 10 100
IC - Collector Current (A) VCE(sat) v IC
IC - Collector Current (A) VCE(sat) v IC
750
VCE=2V
1.6
IC/IB=100
hFE - Typical Gain
500
VBE(sat) - (V)
+100°C +25°C -55°C
1.2
0.8
250
0.4
-55°C +25°C +100°C
0 1m 10m 100m 1 10 100
0 1m 10m 100m 1 10 100
IC - Collector Current (A) hFE v IC
IC - Collector Current (A) VBE(sat) v IC
1.2
VCE=2V
10
0.8
IC - Collector Current (A)
VBE(on) - (V)
1
DC 1s 100ms 10ms 1ms 100us
0.4
-55°C +25°C +100°C
100m
0 1m 10m 100m 1 10 100
10m 100m
1
10
100
IC - Collector Current (A) VBE(on) v IC
VCE - Collector Emitter Voltage (V)
Safe Operating Area
FZT1149A
THERMAL CHARACTERISTICS
4
Thermal Resistance (°C/W)
50 40
D=1
t1
D=t1 tP tP
Max Power Dissipation - (Watts)
3
30 20 10 0 100µs
D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse
2
1
0 0 20 40 60 80 100 120 140 160
1ms
10ms 100ms
1s
10s
100s
Pulse Width
T - Ambient Temperature (°C)
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS *ZETEX FZT1149A Spice model Last revision 10/1/97 * .MODEL FZT1149A PNP IS =9.5e-13 NF=1.002 ISE=1.2e-13 NE =1.4 + BF =520 VAF=24.97 IKF=5 NR =0.997 + ISC=4.5E-13 NC =1.25 BR = 40 VAR=2.51 IKR=0.7 + RE =20e-3 RB =150e-3 RC =10e-3 CJE=490e-12 + CJC=150e-12 VJC=1.094 MJC= 0.4739 TF =1e-9 TR = 3.5e-9 * *
© 1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
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