FZT458

SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 – JANUARY 1996 FEATURES * 400 Volt VCEO FZT458 C COMPLEMENTARY TYPE – PARTMARKING DETAIL – FZT558 FZT458 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO Collector Cut-Off Currents Emitter Cut-Off Current Emitter Saturation Voltages ICBO ICES IEBO VCE(sat) VBE(sat) Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage Switching times VBE(on) hFE fT Cobo ton toff 100 100 15 50 5 135 Typical 2260 Typical MIN. 400 400 5 100 100 100 0.2 0.5 0.9 0.9 300 MHz pF ns ns SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg MAX. VALUE 400 400 5 300 1 200 2 -55 to +150 UNIT V V V nA nA nA V V V V UNIT V V V mA A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=320V VCE=320V VEB=4V IC=20mA, IB=2mA* IC=50mA, IB=6mA* IC=50mA, IB=5mA* IC=50mA, VCE=10V* IC=1mA, VCE=10V IC=50mA, VCE=10V* IC=100mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz IC=50mA, VCC=100V IB1=5mA, IB2=-10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT458 datasheet 3 - 187