FZT549

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – MARCH 1995 PARTMARKING DETAIL – 7 FZT549 C FZT549 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL MIN. -35 -30 -5 -0.1 -10 -0.1 -0.50 -0.75 -1.25 -1.0 70 100 80 30 100 10 300 MHz pF SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -35 -30 -5 -2 -1 2 -55 to +150 UNIT V V V µA µA µA UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-30V VCB=-30V, Tamb=100°C VEB=-4V IC=-1A, IB =-100mA* IC=-2A, IB -200mA* IC=-1A, IB=-100mA* IC =-1A, VCE =-2V* IC=-50mA, VCE =-2V IC =-500mA, VCE =-2V* IC =-1A, VCE =-2V* IC =-2A, VCE =-2V* IC=-100mA, VCE=-5V, f =100MHz VCB=-10V, f=1MHz V V V V Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT549 datasheet. 3 - 191