FZT558

FZT558 TYPICAL CHARACTERISTICS 1.6 1.4 IC/IB =20 IC/IB =10 1.6 1.4 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 – DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt C FZT558 IC/IB =50 -55°C +25°C +100°C +175°C IC/IB =10 E PARTMARKING DETAIL FZT558 B C - (Volts) 1.2 1.0 0.8 0.6 - (Volts) 1.2 1.0 0.8 0.6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 20 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.4 0.2 0 0.001 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. VALUE -400 -400 -5 -200 2 -55 to +150 UNIT V V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-320V VCE=-320V VEB=-4V UNIT V V V mA W °C V V I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Temperature Range VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain - Typical Gain 1.4 1.2 1.0 0.8 0.6 0.4 +100°C +25°C -55°C VCE=10V 1.6 300 1.4 -55°C +25°C +100°C +175°C IC/IB =10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL MIN. V(BR)CBO VBR(CEO) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 95 1600 100 100 15 50 5 -400 -400 -5 -100 -100 -100 -0.2 -0.5 -0.9 -0.9 300 MHz pF ns ns - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 200 h 0.2 0 0.001 0.01 0.1 1 10 20 h 100 Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage nA nA nA V V V V I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC IC=-20mA, IB=-2mA* IC=-50mA, IB=-6mA* IC=-50mA, IB=-5mA* IC=-50mA, VCE=-10V* IC=-1mA, VCE=-10V IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz IC=-50mA, VC=-100V IB1=5mA, IB2=-10mA 1.6 1.4 -55°C +25°C +100°C +175°C VCE=10V Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) Collector-Base Breakdown Voltage Switching times VBE(on) v IC 3 - 193 * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 192 FZT558 TYPICAL CHARACTERISTICS 1.6 1.4 IC/IB =20 IC/IB =10 1.6 1.4 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 – DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt C FZT558 IC/IB =50 -55°C +25°C +100°C +175°C IC/IB =10 E PARTMARKING DETAIL FZT558 B C - (Volts) 1.2 1.0 0.8 0.6 - (Volts) 1.2 1.0 0.8 0.6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 20 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.4 0.2 0 0.001 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. VALUE -400 -400 -5 -200 2 -55 to +150 UNIT V V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-320V VCE=-320V VEB=-4V UNIT V V V mA W °C V V I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Temperature Range VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain - Typical Gain 1.4 1.2 1.0 0.8 0.6 0.4 +100°C +25°C -55°C VCE=10V 1.6 300 1.4 -55°C +25°C +100°C +175°C IC/IB =10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL MIN. V(BR)CBO VBR(CEO) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 95 1600 100 100 15 50 5 -400 -400 -5 -100 -100 -100 -0.2 -0.5 -0.9 -0.9 300 MHz pF ns ns - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 200 h 0.2 0 0.001 0.01 0.1 1 10 20 h 100 Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage nA nA nA V V V V I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC IC=-20mA, IB=-2mA* IC=-50mA, IB=-6mA* IC=-50mA, IB=-5mA* IC=-50mA, VCE=-10V* IC=-1mA, VCE=-10V IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz IC=-50mA, VC=-100V IB1=5mA, IB2=-10mA 1.6 1.4 -55°C +25°C +100°C +175°C VCE=10V Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) Collector-Base Breakdown Voltage Switching times VBE(on) v IC 3 - 193 * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 192