FZT560

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C FZT560 E C B PARTMARKING DETAIL – FZT560 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE -500 -500 -5 -500 -150 2 -55 to +150 UNIT V V V mA mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching times SYMBOL V (BR)CBO V CEO(SUS) V (BR)EBO I CBO I CES I EBO V CE(sat) V BE(sat) V BE(on) h FE MIN. -500 -500 -5 -100 -100 -100 -0.20 -0.5 -0.9 -0.9 100 300 80 300 15 typ 60 8 110 typ. 1.5 typ MHz pF ns µs MAX. UNIT V V V nA nA nA V V V V CONDITIONS. I C=-100 µ A I C=-10mA* I E=-100 µ A V CB=-500V V CE=-500V V EB=-5V I C=-20mA, I B=-2mA I C=-50mA, I B=-10mA* I C=-50mA, I B=-10mA* I C =-50mA, V CE=-10V* I C=-1mA, V CE=-10V I C=-50mA, V CE=-10V* I C=-100mA, V CE=-10V* I C=-10mA, V CE=-20V f=50MHz V CB=-20, f=1MHz V CE=-100, I C=-50mA, I B1=-5mA,I B2=10mA, fT C obo t on t off * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% FZT560 TYPICAL CHARACTERISTICS 0.8 +25°C 1.6 0.6 1.2 IC/IB=10 IC/IB=20 IC/IB=50 IC/IB=10 0.8 0.4 -55°C +25°C +100°C +150°C 0.4 0.2 0 1m 10m 100m 0 1m 10m 100m IC - Collector Current (A) VCE(sat) v IC IC - Collector Current (A) VCE(sat) v IC 1.0 VCE=5V IC/IB=10 240 0.8 +100°C 160 +25°C 0.6 0.4 0.2 0 1m 10m 100m 1 -55°C +25°C +100°C +150°C 80 -55°C 0 1m 10m 100m IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(sat) v IC 1.0 1 0.75 0.1 0.5 -55°C +25°C +100°C +150°C 0.01 0.25 DC 1s 100ms 10ms 1ms 100us 0 1m 10m 100m 0.001 1 10 100 1000 IC - Collector Current (A) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area