FZT591

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 7 FZT591 C COMPLEMENTARY TYPE FZT491 PARTMARKING DETAIL - FZT591 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. VALUE -80 -60 -5 -2 -1 -200 2 -55 to +150 UNIT CONDITIONS. V V V -100 -100 -100 -0.3 -0.6 -1.2 -1.0 100 100 80 15 150 10 300 nA nA nA V V V V IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-60V VEB=-4V, IC=0 VCES=-60V IC=-500mA,IB=-50mA* IC=-1A, IB=-100mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-5V* IC=-1mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz UNIT V V V A A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Emitter Saturation Voltages ICBO IEBO ICES VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance VBE(on) hFE -80 -60 -5 fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT591 datasheet 3 - 195