FZT603

FZT603 PACKAGE OUTLINE DETAILS Dim A B C D E F G H K L M Millimeters Min 6.3 3.3 – 0.6 2.9 0.24 0.85 0.02 6.7 Max 6.7 3.7 1.7 0.8 3.1 0.32 1.05 0.10 7.3 Min 0.248 0.130 – 0.024 0.114 0.009 0.033 0.0008 0.264 Inches Max 0.264 0.146 0.067 0.031 0.122 0.013 0.041 0.004 0.287 SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 3 – NOVEMBER 1995 FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching PARTMARKING DETAIL – DEVICE TYPE IN FULL C FZT603 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 100 80 10 6 2 2 -55 to +150 UNIT V V V A A W °C NOM 4.6 NOM 0.181 NOM 2.3 NOM 0.0905 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 0.79 0.80 0.88 0.99 0.86 MIN. 100 80 10 TYP. 240 110 16 0.01 10 0.1 10 0.88 0.90 1.00 1.13 MAX. UNIT V V V µA µA µA µA CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=80V VCB=80V, Tamb=100°C VEB=8V VCES=80V IC=0.25A, IB=0.25mA* IC=0.4A, IB=0.4mA* IC=1A, IB=1mA* IC=2A, IB=20mA* IC=2A, IB=20mA † V V V V V † Tj=150°C FZT603 ELECTRICAL CHARACTERISTICS (Continued) PARAMETER Base-Emitter Saturation Voltage SYMBOL VBE(sat) MIN. TYP. 1.7 1.5 3k 5k 3k 2k 14k 15k 14k 10k 2k 750 MAX. 1.95 1.75 100k UNIT V V CONDITIONS. IC=2A, IB=20mA* - (Volts) 1.6 1.4 1.2 1.0 0.8 0.6 1.8 FZT603 TYPICAL CHARACTERISTICS - Gain normalised to 1 Amp -55°C +25°C +100°C +175°C 2.5 -55°C +25°C +100°C 2.0 VCE =5V Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE IC=2A, VCE=5V* IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* IC=5A, VCE=5V* IC=6A, VCE=5V* IC /IB =100 1.5 1.0 V 0.4 0.2 0.5 0 0.01 0.1 1 10 h 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) Transition Frequency Output Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff 150 90 15 0.5 1.6 MHz pF pF µs µs IC=100mA, VCE=10V f=20MHz VEB=500mV, f=1MHz 2.2 VCE(sat) v IC hFE v IC - (Volts) VCB=10V, f=1MHz IC=0.5A, VCE=10V IB1=IB2=0.5mA 2.0 1.8 1.6 1.4 1.2 -55°C +25°C +100°C +175°C 1.8 1.6 -55°C +25°C +100°C - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VCE =5V V *Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2% Spice parameter data is available upon request for this device 0.8 0.6 0.4 0.01 0.1 1 10 V 1.0 IC/IB =100 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Single Pulse Test Tamb = 25 °C 1 0.1 DC 1s 100ms 10ms 1ms 100µS 0.01 0.1 1 10 100 V CE - Collector Voltage (Volts) Safe Operating Area FZT603 ELECTRICAL CHARACTERISTICS (Continued) PARAMETER Base-Emitter Saturation Voltage SYMBOL VBE(sat) MIN. TYP. 1.7 1.5 3k 5k 3k 2k 14k 15k 14k 10k 2k 750 MAX. 1.95 1.75 100k UNIT V V CONDITIONS. IC=2A, IB=20mA* - (Volts) 1.6 1.4 1.2 1.0 0.8 0.6 1.8 FZT603 TYPICAL CHARACTERISTICS - Gain normalised to 1 Amp -55°C +25°C +100°C +175°C 2.5 -55°C +25°C +100°C 2.0 VCE =5V Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE IC=2A, VCE=5V* IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* IC=5A, VCE=5V* IC=6A, VCE=5V* IC /IB =100 1.5 1.0 V 0.4 0.2 0.5 0 0.01 0.1 1 10 h 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) Transition Frequency Output Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff 150 90 15 0.5 1.6 MHz pF pF µs µs IC=100mA, VCE=10V f=20MHz VEB=500mV, f=1MHz 2.2 VCE(sat) v IC hFE v IC - (Volts) VCB=10V, f=1MHz IC=0.5A, VCE=10V IB1=IB2=0.5mA 2.0 1.8 1.6 1.4 1.2 -55°C +25°C +100°C +175°C 1.8 1.6 -55°C +25°C +100°C - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VCE =5V V *Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2% Spice parameter data is available upon request for this device 0.8 0.6 0.4 0.01 0.1 1 10 V 1.0 IC/IB =100 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Single Pulse Test Tamb = 25 °C 1 0.1 DC 1s 100ms 10ms 1ms 100µS 0.01 0.1 1 10 100 V CE - Collector Voltage (Volts) Safe Operating Area