FZT651

FZT651 TYPICAL CHARACTERISTICS 0.6 0.5 225 0.4 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – FZT751 VCE=2V 125 FZT651 C E C B - (Volts) IC/IB=10 0.3 - Gain 175 PARTMARKING DETAIL – FZT651 0.2 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 h 0.1 75 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. UNIT V V V 0.1 10 0.1 0.3 0.6 1.25 1 300 MHz ns ns 30 pF µA µA µA VALUE 80 60 5 6 3 2 -55 to +150 CONDITIONS. IC=100µA IC=10mA* IE=100µA UNIT V V V A A W °C V 0 0.0001 0.001 0.01 0.1 1 10 0 IC - Collector Current (Amps) Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 1.2 1.2 1.0 1.0 Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO 80 V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 80 40 140 0.12 0.43 0.9 0.8 200 200 170 80 175 45 800 60 5 - (Volts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VCE=2V IC/IB=10 - (Volts) V 0.8 0.8 0.6 V 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 VBE(on) v IC amb Single Pulse Test at T =25°C td tr tf ns 140 ts ns 1400 IB1=IB2=IC/10 1 120 1200 ts Switching time 100 1000 80 800 td Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency V V V V VCB=60V VCB=60V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* IC=1A, VCE =2V* IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* IC=100mA, VCE =5V f=100MHz IC=500mA, VCC =10V IB1=IB2=50mA VCB =10V, f=1MHz 0.1 DC 1s 100m s 10ms 1ms 100µs 60 600 tf 40 400 tr 20 200 fT t on t off Cobo 0 0 0.01 0.1 1 0.01 0.1 1 10 100 Switching Times Output Capacitance VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area 3 - 208 Switching Speeds *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 207 FZT651 TYPICAL CHARACTERISTICS 0.6 0.5 225 0.4 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – FZT751 VCE=2V 125 FZT651 C E C B - (Volts) IC/IB=10 0.3 - Gain 175 PARTMARKING DETAIL – FZT651 0.2 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 h 0.1 75 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. UNIT V V V 0.1 10 0.1 0.3 0.6 1.25 1 300 MHz ns ns 30 pF µA µA µA VALUE 80 60 5 6 3 2 -55 to +150 CONDITIONS. IC=100µA IC=10mA* IE=100µA UNIT V V V A A W °C V 0 0.0001 0.001 0.01 0.1 1 10 0 IC - Collector Current (Amps) Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 1.2 1.2 1.0 1.0 Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO 80 V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 80 40 140 0.12 0.43 0.9 0.8 200 200 170 80 175 45 800 60 5 - (Volts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VCE=2V IC/IB=10 - (Volts) V 0.8 0.8 0.6 V 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 VBE(on) v IC amb Single Pulse Test at T =25°C td tr tf ns 140 ts ns 1400 IB1=IB2=IC/10 1 120 1200 ts Switching time 100 1000 80 800 td Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency V V V V VCB=60V VCB=60V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* IC=1A, VCE =2V* IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* IC=100mA, VCE =5V f=100MHz IC=500mA, VCC =10V IB1=IB2=50mA VCB =10V, f=1MHz 0.1 DC 1s 100m s 10ms 1ms 100µs 60 600 tf 40 400 tr 20 200 fT t on t off Cobo 0 0 0.01 0.1 1 0.01 0.1 1 10 100 Switching Times Output Capacitance VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area 3 - 208 Switching Speeds *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 207