FZT653

FZT653 TYPICAL CHARACTERISTICS 0.6 0.5 225 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – VCE=2V 125 FZT653 C FZT753 E FZT653 B C - (Volts) 0.4 IC/IB=10 0.3 - Gain 175 0.2 h ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 0.1 75 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 120 100 5 6 2 2 -55 to +150 UNIT V V V CONDITIONS. IC=100µA IC=10mA* IE=100µA UNIT V V V A A W °C V 0 0.0001 0.001 0.01 0.1 1 10 25 Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25°C IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 1.2 Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency 0.1 1 - (Volts) 1.2 1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VCE=2V 1.0 IC/IB=10 - (Volts) 0.8 SYMBOL MIN. 120 V(BR)CBO V(BR)CEO V(BR)EBO 100 5 V 0.8 V 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 55 25 140 0.13 0.23 0.9 0.8 200 200 110 55 175 IC - Collector Current (Amps) VBE(sat) v IC 10 VBE(on) v IC =25°C td tr tf ns 280 ts ns 2800 Single Pulse Test at T amb IB1=IB2=IC/10 0.1 10 0.1 0.3 0.5 1.25 1.0 300 µA µA µA V V V V VCB=100V VCB=100V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE =2V* IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* IC=100mA, VCE =5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCC =10V IB1=IB2=50mA 1 240 2400 Switching time 200 2000 ts 0.1 DC 1s 100ms 10ms 1ms 300µs 160 1600 120 1200 tf 80 800 td 40 400 tr fT Cobo ton toff MHz 30 pF ns ns 0.01 0 0 0.01 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Output Capacitance Switching Times 80 1200 Safe Operating Area 3 - 210 Switching Speeds *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 209 FZT653 TYPICAL CHARACTERISTICS 0.6 0.5 225 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – VCE=2V 125 FZT653 C FZT753 E FZT653 B C - (Volts) 0.4 IC/IB=10 0.3 - Gain 175 0.2 h ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 0.1 75 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 120 100 5 6 2 2 -55 to +150 UNIT V V V CONDITIONS. IC=100µA IC=10mA* IE=100µA UNIT V V V A A W °C V 0 0.0001 0.001 0.01 0.1 1 10 25 Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25°C IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 1.2 Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency 0.1 1 - (Volts) 1.2 1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VCE=2V 1.0 IC/IB=10 - (Volts) 0.8 SYMBOL MIN. 120 V(BR)CBO V(BR)CEO V(BR)EBO 100 5 V 0.8 V 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 55 25 140 0.13 0.23 0.9 0.8 200 200 110 55 175 IC - Collector Current (Amps) VBE(sat) v IC 10 VBE(on) v IC =25°C td tr tf ns 280 ts ns 2800 Single Pulse Test at T amb IB1=IB2=IC/10 0.1 10 0.1 0.3 0.5 1.25 1.0 300 µA µA µA V V V V VCB=100V VCB=100V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE =2V* IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* IC=100mA, VCE =5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCC =10V IB1=IB2=50mA 1 240 2400 Switching time 200 2000 ts 0.1 DC 1s 100ms 10ms 1ms 300µs 160 1600 120 1200 tf 80 800 td 40 400 tr fT Cobo ton toff MHz 30 pF ns ns 0.01 0 0 0.01 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Output Capacitance Switching Times 80 1200 Safe Operating Area 3 - 210 Switching Speeds *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 209