FZT657

FZT657 TYPICAL CHARACTERISTICS 1.8 1.6 100 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE - FZT757 FZT657 C - Normalised Gain (%) 1.4 80 VCE=5V 60 E PARTMARKING DETAIL - FZT657 B C - (Volts) 1.2 1.0 0.8 0.6 IC /IB=10 40 V 0.4 0.2 0 0.01 0.1 1 10 20 ABSOLUTE MAXIMUM RATINGS. PARAMETER 0.01 0.1 1 10 0 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 300 300 5 1 0.5 2 -55 to +150 UNIT V V V CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=200V VEB=3V UNIT V V V A A W °C h Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.2 IC/IB=10 1.2 VCE=5V 1.0 - (Volts) Operating and Storage Temperature Range PARAMETER SYMBOL MIN. V(BR)CBO V(BR)CEO 300 300 5 0.8 - (Volts) 1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Collector-Base Breakdown Voltage 0.01 0.1 1 10 0.8 V 0.6 V 0.6 0.4 0.01 0.1 1 10 0.4 Collector-Emitter Breakdown Voltage I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo VBE(sat) v IC 1 Single Pulse T est at Tamb=25°C td tr tf µs 1.4 ts VBE(on) v IC 0.1 0.1 0.5 1.0 1.0 40 50 30 20 µA µA IB1=IB2=IC/10 VCE=10V ts µs Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance V V V IC=100mA, IB=10mA* IC=100mA, IB=10mA* IC=100mA, VCE =5V* IC=10mA, VCE =5V* IC=100mA, VCE =5V* 0.1 1.2 3 Switching time 1.0 0.01 DC 100ms 10ms 1ms 300µs 0.8 tf 0.6 2 0.4 td 0.2 tr 1 0.001 0 0 0.1 1 1 10 100 1000 0.01 MHz pF VCE - Collector Emitter Voltage (V) I+ - Collector Current (Amps) IC=10mA, VCE =20V f=20MHz VCB =20V, f=1MHz Safe Operating Area 3 - 214 Switching Speeds *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 213 FZT657 TYPICAL CHARACTERISTICS 1.8 1.6 100 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE - FZT757 FZT657 C - Normalised Gain (%) 1.4 80 VCE=5V 60 E PARTMARKING DETAIL - FZT657 B C - (Volts) 1.2 1.0 0.8 0.6 IC /IB=10 40 V 0.4 0.2 0 0.01 0.1 1 10 20 ABSOLUTE MAXIMUM RATINGS. PARAMETER 0.01 0.1 1 10 0 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 300 300 5 1 0.5 2 -55 to +150 UNIT V V V CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=200V VEB=3V UNIT V V V A A W °C h Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.2 IC/IB=10 1.2 VCE=5V 1.0 - (Volts) Operating and Storage Temperature Range PARAMETER SYMBOL MIN. V(BR)CBO V(BR)CEO 300 300 5 0.8 - (Volts) 1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Collector-Base Breakdown Voltage 0.01 0.1 1 10 0.8 V 0.6 V 0.6 0.4 0.01 0.1 1 10 0.4 Collector-Emitter Breakdown Voltage I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo VBE(sat) v IC 1 Single Pulse T est at Tamb=25°C td tr tf µs 1.4 ts VBE(on) v IC 0.1 0.1 0.5 1.0 1.0 40 50 30 20 µA µA IB1=IB2=IC/10 VCE=10V ts µs Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance V V V IC=100mA, IB=10mA* IC=100mA, IB=10mA* IC=100mA, VCE =5V* IC=10mA, VCE =5V* IC=100mA, VCE =5V* 0.1 1.2 3 Switching time 1.0 0.01 DC 100ms 10ms 1ms 300µs 0.8 tf 0.6 2 0.4 td 0.2 tr 1 0.001 0 0 0.1 1 1 10 100 1000 0.01 MHz pF VCE - Collector Emitter Voltage (V) I+ - Collector Current (Amps) IC=10mA, VCE =20V f=20MHz VCB =20V, f=1MHz Safe Operating Area 3 - 214 Switching Speeds *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 213