FZT692B

FZT692B TYPICAL CHARACTERISTICS 0.8 IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25°C 0.8 -55°C +25°C +100°C +175°C SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High Gain + Very low saturation voltage APPLICATIONS * Darlington replacement * Relay drivers, DC-DC converters PARTMARKING DETAIL FZT692B FZT692B C E C B IC/IB=100 - (Volts) 0.6 0.4 0.2 0 - (Volts) 0.6 0.4 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage 0.01 0.1 1 10 V V SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 70 70 5 5 2 2 -55 to +150 UNIT V V V A A W °C 0.2 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain - Typical Gain - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 00 +100°C +25°C -55°C VCE=2V 1.5K 1K 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55°C +25°C +100°C +175°C IC/IB=100 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. V(BR)CBO 70 V(BR)CEO 70 V(BR)EBO 5 Cut-Off Currents ICBO IEBO Saturation Voltages VCE(sat) VBE(sat) 0.1 0.1 0.15 0.5 0.5 0.9 0.9 500 400 150 150 200 12 46 1440 BreakdownVoltages TYP. MAX. UNIT TEST CONDITIONS. V V V µA µA IC=100µ A IC=10mA* IE=100µ A VCB=55V VEB=4V IC=0.1A, IB=0.5mA* IC=1A, IB=10mA* IC=2A, IB=200mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA,VCE=2V* IC=500mA, VCE =2V* IC=1A,VCE=2V* 500 h 0.01 0.1 1 10 h V 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC V V V V V 1.6 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 -55°C +25°C +100°C +175°C VCE=2V 10 Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio DC 1s 100ms 10ms 1ms 100µs VBE(on) hFE fT Cibo Cobo ton toff 1 Transition Frequency Input Capacitance Output Capacitance Switching Times 1 10 100 MHz pF pF ns ns IC=50mA, VCE=5V, f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB1=50mA IB2=50mA, VCC=10V 0.1 V I+ - Collector Current (Amps) 0.01 0.1 1 10 0.01 0.1 VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 224 3 - 223 FZT692B TYPICAL CHARACTERISTICS 0.8 IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25°C 0.8 -55°C +25°C +100°C +175°C SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High Gain + Very low saturation voltage APPLICATIONS * Darlington replacement * Relay drivers, DC-DC converters PARTMARKING DETAIL FZT692B FZT692B C E C B IC/IB=100 - (Volts) 0.6 0.4 0.2 0 - (Volts) 0.6 0.4 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage 0.01 0.1 1 10 V V SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 70 70 5 5 2 2 -55 to +150 UNIT V V V A A W °C 0.2 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain - Typical Gain - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 00 +100°C +25°C -55°C VCE=2V 1.5K 1K 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55°C +25°C +100°C +175°C IC/IB=100 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. V(BR)CBO 70 V(BR)CEO 70 V(BR)EBO 5 Cut-Off Currents ICBO IEBO Saturation Voltages VCE(sat) VBE(sat) 0.1 0.1 0.15 0.5 0.5 0.9 0.9 500 400 150 150 200 12 46 1440 BreakdownVoltages TYP. MAX. UNIT TEST CONDITIONS. V V V µA µA IC=100µ A IC=10mA* IE=100µ A VCB=55V VEB=4V IC=0.1A, IB=0.5mA* IC=1A, IB=10mA* IC=2A, IB=200mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA,VCE=2V* IC=500mA, VCE =2V* IC=1A,VCE=2V* 500 h 0.01 0.1 1 10 h V 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC V V V V V 1.6 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 -55°C +25°C +100°C +175°C VCE=2V 10 Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio DC 1s 100ms 10ms 1ms 100µs VBE(on) hFE fT Cibo Cobo ton toff 1 Transition Frequency Input Capacitance Output Capacitance Switching Times 1 10 100 MHz pF pF ns ns IC=50mA, VCE=5V, f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB1=50mA IB2=50mA, VCC=10V 0.1 V I+ - Collector Current (Amps) 0.01 0.1 1 10 0.01 0.1 VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 224 3 - 223