FZT694B

FZT694B TYPICAL CHARACTERISTICS IC/IB=200 0.8 IC/IB =10 IC/IB=100 Tamb=25°C 0.8 SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low Saturation Voltage * Gain of 400 at IC=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B FZT694B C -55°C +25°C +100°C +175°C IC/IB=100 E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 120 120 5 2 1 2 -55 to +150 MAX. UNIT V V V 0.1 0.1 0.25 0.5 0.9 0.9 µA µA - (Volts) 0.6 - (Volts) 0.6 0.4 0.4 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Tamb=25°C 0.2 0.2 UNIT V V V A A W °C V 0 0.01 0.1 1 10 V 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain 1.4 1.2 1.0 0.8 0.6 +100°C +25°C -55°C VCE=2V 1.5K 1.6 1.4 -55°C +25°C +100°C +175°C IC/IB=100 Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 500 400 150 130 Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio MIN. 120 120 5 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) TYP. CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=100V VEB=4V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* MHz 200 9 80 2900 pF pF ns ns IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V - Typical Gain - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 1K 500 0.4 h 0.2 0 0 0.01 0.1 1 10 0 0.01 0.1 1 10 h I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC V V V V 1.6 1.4 -55°C +25°C +100°C +175°C VCE=2V 10 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 1 DC 1s 100ms 10ms 1ms 100us Transition Frequency Input Capacitance Output Capacitance 10 100 1000 V 0.1 0 0.01 0.1 1 10 0.01 1 Switching Times I+ - Collector Current (Amps) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 226 3 - 225 FZT694B TYPICAL CHARACTERISTICS IC/IB=200 0.8 IC/IB =10 IC/IB=100 Tamb=25°C 0.8 SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low Saturation Voltage * Gain of 400 at IC=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B FZT694B C -55°C +25°C +100°C +175°C IC/IB=100 E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 120 120 5 2 1 2 -55 to +150 MAX. UNIT V V V 0.1 0.1 0.25 0.5 0.9 0.9 µA µA - (Volts) 0.6 - (Volts) 0.6 0.4 0.4 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Tamb=25°C 0.2 0.2 UNIT V V V A A W °C V 0 0.01 0.1 1 10 V 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain 1.4 1.2 1.0 0.8 0.6 +100°C +25°C -55°C VCE=2V 1.5K 1.6 1.4 -55°C +25°C +100°C +175°C IC/IB=100 Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 500 400 150 130 Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio MIN. 120 120 5 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) TYP. CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=100V VEB=4V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* MHz 200 9 80 2900 pF pF ns ns IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V - Typical Gain - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 1K 500 0.4 h 0.2 0 0 0.01 0.1 1 10 0 0.01 0.1 1 10 h I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC V V V V 1.6 1.4 -55°C +25°C +100°C +175°C VCE=2V 10 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 1 DC 1s 100ms 10ms 1ms 100us Transition Frequency Input Capacitance Output Capacitance 10 100 1000 V 0.1 0 0.01 0.1 1 10 0.01 1 Switching Times I+ - Collector Current (Amps) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 226 3 - 225