FZT696B

FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.8 IC/IB=10 IC/IB=50 Tamb=25°C 0.8 SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4 – FEBRUARY 1997 FEATURES * 250 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits PARTMARKING DETAIL – FZT696B FZT696B C -55°C +25°C +100°C +175°C IC/IB=50 E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 180 180 5 1 0.5 2 -55 to +150 UNIT V V V A A W °C - (Volts) 0.6 - (Volts) 0.6 0.4 0.4 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 V 0.2 V 0.2 0 0.01 0.1 1 10 0 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 +100°C +25°C -55°C VCE=5V 1.5K 1.6 1.4 - Normalised Gain -55°C +25°C +100°C +175°C Operating and Storage Temperature Range IC/IB=50 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-OnVoltage Static Forward Current Transfer Ratio V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 500 150 70 200 6 80 4400 180 180 5 - Typical Gain - (Volts) 1.2 1.0 0.8 0.6 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V 0.1 0.1 0.2 0.2 0.25 0.9 0.9 µA µA 1K IC=100µ A IC=10mA* IE=100µ A VCB=140V VEB=4V IC=50mA, IB=0.5mA* IC=100mA, IB=2mA* IC=200mA, IB=5mA* IC=200mA, IB=5mA* IC=200mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=5V* 500 V h 0 0.01 0.1 1 10 0.4 0.2 h 0 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC 1 VCE=5V VBE(sat) v IC V V V V V 1.6 1.4 -55°C +25°C +100°C +175°C - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 DC 1s 100ms 10ms 1ms 100µs V 0.01 Transition Frequency Input Capacitance Output Capacitance 10V 100V 1000V MHz pF pF ns ns IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCE=10V, f=1MHz IC=100mA, IB1=10mA IB2=10mA, VCC=50V 0 0.01 0.1 1 10 0.001 1V Switching Times I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 228 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 227 FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.8 IC/IB=10 IC/IB=50 Tamb=25°C 0.8 SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4 – FEBRUARY 1997 FEATURES * 250 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits PARTMARKING DETAIL – FZT696B FZT696B C -55°C +25°C +100°C +175°C IC/IB=50 E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 180 180 5 1 0.5 2 -55 to +150 UNIT V V V A A W °C - (Volts) 0.6 - (Volts) 0.6 0.4 0.4 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 V 0.2 V 0.2 0 0.01 0.1 1 10 0 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 +100°C +25°C -55°C VCE=5V 1.5K 1.6 1.4 - Normalised Gain -55°C +25°C +100°C +175°C Operating and Storage Temperature Range IC/IB=50 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-OnVoltage Static Forward Current Transfer Ratio V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 500 150 70 200 6 80 4400 180 180 5 - Typical Gain - (Volts) 1.2 1.0 0.8 0.6 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V 0.1 0.1 0.2 0.2 0.25 0.9 0.9 µA µA 1K IC=100µ A IC=10mA* IE=100µ A VCB=140V VEB=4V IC=50mA, IB=0.5mA* IC=100mA, IB=2mA* IC=200mA, IB=5mA* IC=200mA, IB=5mA* IC=200mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=5V* 500 V h 0 0.01 0.1 1 10 0.4 0.2 h 0 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC 1 VCE=5V VBE(sat) v IC V V V V V 1.6 1.4 -55°C +25°C +100°C +175°C - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 DC 1s 100ms 10ms 1ms 100µs V 0.01 Transition Frequency Input Capacitance Output Capacitance 10V 100V 1000V MHz pF pF ns ns IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCE=10V, f=1MHz IC=100mA, IB1=10mA IB2=10mA, VCC=50V 0 0.01 0.1 1 10 0.001 1V Switching Times I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 228 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 227