FZT749

FZT749 TYPICAL CHARACTERISTICS td tr SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A (pulsed). COMPLEMENTARY TYPE – PARTMARKING DETAIL – FZT649 FZT749 FZT749 C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 IC/IB=100 ts tf ns 160 IB1=IB2=IC/10 VCE=-10V - (Volts) 140 Switching time ns 1200 120 E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -35 -25 -5 -8 -3 2 -55 to +150 UNIT V V V -0.1 -10 -0.1 -0.12 -0.40 -0.9 -0.8 -0.3 -0.6 -1.25 -1.0 300 MHz 100 pF ns µA µA µA ts 1000 100 tf 80 600 60 0.4 0.2 0 IC/IB=10 0.001 200 40 tr td ABSOLUTE MAXIMUM RATINGS. PARAMETER 1 V 20 UNIT V V V A A W °C 0 0.01 0.1 1 10 0.01 0.1 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.2 Operating and Storage Temperature Range 200 1.0 VCE=2V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC/IB=10 - Gain 160 - (Volts) 0.8 PARAMETER Breakdown Voltages IC/IB=100 SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO -35 -25 -5 CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-30V VCB=-30V,Tamb=100°C VEB=4V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA 120 h 0.6 80 V 0.4 40 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector Cut-Off Currents Saturation Voltages ICBO IEBO VCE(sat) VBE(sat) IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 1.2 VBE(sat) v IC Single Pulse Test at Tamb=25°C V V V V 1.0 VCE=2V 0.8 I - Collector Current (Amps) Base-Emitter Turn-On Voltage 1.0 VBE(on) hFE 70 100 75 15 100 - (Volts) Static Forward Current Transfer Ratio D.C. 1s 100ms 200 200 150 50 160 55 40 0.6 V 0.1 10ms 1.0ms 100 Transition Frequency Output Capacitance fT Cobo ton µs 0.4 0.001 0.01 0.1 1 10 0.01 1 10 100 Switching Times VCE - Collector Voltage (Volts) IC - Collector Current (Amps) VBE(on) v IC Safe Operating Area toff 450 ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 232 3 - 233 FZT749 TYPICAL CHARACTERISTICS td tr SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A (pulsed). COMPLEMENTARY TYPE – PARTMARKING DETAIL – FZT649 FZT749 FZT749 C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 IC/IB=100 ts tf ns 160 IB1=IB2=IC/10 VCE=-10V - (Volts) 140 Switching time ns 1200 120 E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -35 -25 -5 -8 -3 2 -55 to +150 UNIT V V V -0.1 -10 -0.1 -0.12 -0.40 -0.9 -0.8 -0.3 -0.6 -1.25 -1.0 300 MHz 100 pF ns µA µA µA ts 1000 100 tf 80 600 60 0.4 0.2 0 IC/IB=10 0.001 200 40 tr td ABSOLUTE MAXIMUM RATINGS. PARAMETER 1 V 20 UNIT V V V A A W °C 0 0.01 0.1 1 10 0.01 0.1 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.2 Operating and Storage Temperature Range 200 1.0 VCE=2V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC/IB=10 - Gain 160 - (Volts) 0.8 PARAMETER Breakdown Voltages IC/IB=100 SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO -35 -25 -5 CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-30V VCB=-30V,Tamb=100°C VEB=4V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA 120 h 0.6 80 V 0.4 40 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector Cut-Off Currents Saturation Voltages ICBO IEBO VCE(sat) VBE(sat) IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 1.2 VBE(sat) v IC Single Pulse Test at Tamb=25°C V V V V 1.0 VCE=2V 0.8 I - Collector Current (Amps) Base-Emitter Turn-On Voltage 1.0 VBE(on) hFE 70 100 75 15 100 - (Volts) Static Forward Current Transfer Ratio D.C. 1s 100ms 200 200 150 50 160 55 40 0.6 V 0.1 10ms 1.0ms 100 Transition Frequency Output Capacitance fT Cobo ton µs 0.4 0.001 0.01 0.1 1 10 0.01 1 10 100 Switching Times VCE - Collector Voltage (Volts) IC - Collector Current (Amps) VBE(on) v IC Safe Operating Area toff 450 ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 232 3 - 233