FZT753

FZT753 TYPICAL CHARACTERISTICS 0.6 td tr tf SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4– FEBRUARY 1996 FEATURES * Low saturation voltage * Excellent hFE specified up to 2A FZT753 C I*=I* =I+ /10 ts ns 1400 0.5 ns - (Volts) E COMPLEMENTARY TYPE – t@ tI tB tH Switching time 140 0.4 I+ /I*=10 120 1200 FZT653 FZT753 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -120 -100 -5 -6 -2 2 -55 to +150 UNIT V V V -0.1 -10 -0.1 -0.3 -0.5 -1.25 -1.0 300 MHz µA µA µA C B 100 1000 0.3 80 800 PARTMARKING DETAIL – PARAMETER 0.1 1 V 0.2 60 600 ABSOLUTE MAXIMUM RATINGS. UNIT V V V A A W °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. -120 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 55 25 100 -0.17 -0.30 -0.9 -0.8 200 200 170 55 140 -100 -5 40 400 0.1 20 200 0 0 0.0001 0.001 0.01 0.1 0 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 - (Volts) 225 1.2 - Gain ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). I+ /I* =10 175 V+- =2V 1.0 125 CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA h 75 0.6 0 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 V 0.8 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 VBE(sat) v IC Single Pulse T est at Tamb=25°C 1.2 I - Collector Current (A) - (Volts) 1.0 V+ -=2V 1 0.8 DC Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency V V V V VCB=-100V VCB=-100V,Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE =-2V* IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* IC=-100mA, VCE=-5V f=100MHz VCB =-10V f=1MHz IC=-500mA, VCC =-10V IB1=IB2=-50mA 0.1 1s 100ms 10ms 1ms 100 s V 0.6 + µ fT 0.4 0.01 0.0001 0.001 0.01 0.1 1 10 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC 3 - 237 Safe Operating Area 30 pF Cobo ton 40 ns toff 600 ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device Output Capacitance Switching Times 3 - 236 FZT753 TYPICAL CHARACTERISTICS 0.6 td tr tf SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4– FEBRUARY 1996 FEATURES * Low saturation voltage * Excellent hFE specified up to 2A FZT753 C I*=I* =I+ /10 ts ns 1400 0.5 ns - (Volts) E COMPLEMENTARY TYPE – t@ tI tB tH Switching time 140 0.4 I+ /I*=10 120 1200 FZT653 FZT753 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -120 -100 -5 -6 -2 2 -55 to +150 UNIT V V V -0.1 -10 -0.1 -0.3 -0.5 -1.25 -1.0 300 MHz µA µA µA C B 100 1000 0.3 80 800 PARTMARKING DETAIL – PARAMETER 0.1 1 V 0.2 60 600 ABSOLUTE MAXIMUM RATINGS. UNIT V V V A A W °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. -120 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 55 25 100 -0.17 -0.30 -0.9 -0.8 200 200 170 55 140 -100 -5 40 400 0.1 20 200 0 0 0.0001 0.001 0.01 0.1 0 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 - (Volts) 225 1.2 - Gain ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). I+ /I* =10 175 V+- =2V 1.0 125 CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA h 75 0.6 0 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 V 0.8 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 VBE(sat) v IC Single Pulse T est at Tamb=25°C 1.2 I - Collector Current (A) - (Volts) 1.0 V+ -=2V 1 0.8 DC Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency V V V V VCB=-100V VCB=-100V,Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE =-2V* IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* IC=-100mA, VCE=-5V f=100MHz VCB =-10V f=1MHz IC=-500mA, VCC =-10V IB1=IB2=-50mA 0.1 1s 100ms 10ms 1ms 100 s V 0.6 + µ fT 0.4 0.01 0.0001 0.001 0.01 0.1 1 10 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC 3 - 237 Safe Operating Area 30 pF Cobo ton 40 ns toff 600 ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device Output Capacitance Switching Times 3 - 236