FZT757

FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4– JANUARY 1996 FEATURES * Low saturation voltage * 300V VCEO FZT757 C 250 µs IB1=IB2=IC /10 VC E=10V 4 1.6 - (mV) IC /IB=10 200 3 1.4 COMPLEMENTARY TYPE - FZT657 PARTMARKING DETAIL - FZT757 B E C 1.2 ts Switching time 1.0 tf 2 0.8 150 V 0.6 td ABSOLUTE MAXIMUM RATINGS. tr 1 0.4 tf 0.2 tr 0.1 100 PARAMETER Collector-Base Voltage 1 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -300 -300 -5 -1 -0.5 2 -55 to +150 UNIT V V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-200V VEB=-3V UNIT V V V A A W °C ts td 0 0.0001 0.001 0.01 0.1 1 0.01 Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 100 1.2 - Normalised Gain (%) 80 1.0 IC /IB =10 - (Volts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. V(BR)CBO V(BR)CEO -300 -300 -5 -0.1 -0.1 -0.5 -1.0 -1.0 40 50 30 20 MHz pF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage VCE=5V 60 0.8 40 0.6 20 0.4 h V 0 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo hFE v IC 1 VBE(sat) v IC Single Pulse Test at T =25°C µA µA a mb 1.2 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V V V IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE =-5V* IC=-10mA, VCE =-5V* IC=-100mA, VCE =-5V* IC=-10mA, VCE =-20V f=20MHz VCB=-20V, f=1MHz 1.0 VCE=5V 0.8 0.1 DC 100ms 10ms 1ms 300µs - (Volts) 0.6 0.01 Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio 10 100 1000 V 0.4 0.0001 0.001 0.01 0.1 1 0.001 1 Transition Frequency Output Capacitance IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 241 *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 240 FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4– JANUARY 1996 FEATURES * Low saturation voltage * 300V VCEO FZT757 C 250 µs IB1=IB2=IC /10 VC E=10V 4 1.6 - (mV) IC /IB=10 200 3 1.4 COMPLEMENTARY TYPE - FZT657 PARTMARKING DETAIL - FZT757 B E C 1.2 ts Switching time 1.0 tf 2 0.8 150 V 0.6 td ABSOLUTE MAXIMUM RATINGS. tr 1 0.4 tf 0.2 tr 0.1 100 PARAMETER Collector-Base Voltage 1 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -300 -300 -5 -1 -0.5 2 -55 to +150 UNIT V V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-200V VEB=-3V UNIT V V V A A W °C ts td 0 0.0001 0.001 0.01 0.1 1 0.01 Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 100 1.2 - Normalised Gain (%) 80 1.0 IC /IB =10 - (Volts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. V(BR)CBO V(BR)CEO -300 -300 -5 -0.1 -0.1 -0.5 -1.0 -1.0 40 50 30 20 MHz pF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage VCE=5V 60 0.8 40 0.6 20 0.4 h V 0 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo hFE v IC 1 VBE(sat) v IC Single Pulse Test at T =25°C µA µA a mb 1.2 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V V V IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE =-5V* IC=-10mA, VCE =-5V* IC=-100mA, VCE =-5V* IC=-10mA, VCE =-20V f=20MHz VCB=-20V, f=1MHz 1.0 VCE=5V 0.8 0.1 DC 100ms 10ms 1ms 300µs - (Volts) 0.6 0.01 Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio 10 100 1000 V 0.4 0.0001 0.001 0.01 0.1 1 0.001 1 Transition Frequency Output Capacitance IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 241 *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 240