FZT790A

FZT790A TYPICAL CHARACTERISTICS 1.8 1.6 1.4 IC/IB=100 IC/IB=40 IC/IB=10 Tamb=25°C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55°C +25°C +100°C +175°C SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 200 at IC=1 Amp and very low saturation voltage APPLICATIONS * DC-DC converters, Siren drivers. COMPLEMENTARY TYPE FZT690B PARTMARKING DETAIL FZT790A FZT790A C IC/IB=100 E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. -70 -60 -8.5 -0.1 -10 -0.1 -0.15 -0.30 -0.40 -0.8 -0.75 300 250 200 150 100 24 35 600 800 -0.25 -0.45 -0.75 -1.0 VALUE -50 -40 -5 -6 -3 2 -55 to +150 MAX. UNIT V V V µA µA µA - (Volts) 1.0 0.8 0.6 0.4 0.2 0 - (Volts) 1.2 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 V V UNIT V V V A A W °C 0.01 0.1 1 10 Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) MIN. -50 -40 -5 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 - Typical Gain - Normalised Gain - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 +100°C +25°C -55°C VCE=2V 750 500 250 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55°C +25°C +100°C +175°C IC/IB=100 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) Breakdown Voltages CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-30V VCB=-30V, Tamb=100°C VEB=-4V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* h 0.01 0.1 1 10 h V 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio hFE v IC VBE(sat) v IC V V V V V 1.6 1.4 -55°C +25°C +100°C VCE=2V 10 Base-EmitterTurn-OnVoltage VBE(on) 1 DC 1s 100ms 10ms 1ms 100µs - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 hFE V 0.1 Transition Frequency Output Capacitance 1 10 100 fT Cobo ton toff MHz pF ns ns IC=-50mA, VCE=-5V f=50MHz VCB=-10V,f=1MHz IC=-500mA, IB1=-50mA, IB2=-50mA, VCC=-10V 0.01 0.1 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Switching Times VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 248 3 - 249 FZT790A TYPICAL CHARACTERISTICS 1.8 1.6 1.4 IC/IB=100 IC/IB=40 IC/IB=10 Tamb=25°C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55°C +25°C +100°C +175°C SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 200 at IC=1 Amp and very low saturation voltage APPLICATIONS * DC-DC converters, Siren drivers. COMPLEMENTARY TYPE FZT690B PARTMARKING DETAIL FZT790A FZT790A C IC/IB=100 E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. -70 -60 -8.5 -0.1 -10 -0.1 -0.15 -0.30 -0.40 -0.8 -0.75 300 250 200 150 100 24 35 600 800 -0.25 -0.45 -0.75 -1.0 VALUE -50 -40 -5 -6 -3 2 -55 to +150 MAX. UNIT V V V µA µA µA - (Volts) 1.0 0.8 0.6 0.4 0.2 0 - (Volts) 1.2 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 V V UNIT V V V A A W °C 0.01 0.1 1 10 Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) MIN. -50 -40 -5 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 - Typical Gain - Normalised Gain - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 +100°C +25°C -55°C VCE=2V 750 500 250 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55°C +25°C +100°C +175°C IC/IB=100 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) Breakdown Voltages CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-30V VCB=-30V, Tamb=100°C VEB=-4V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* h 0.01 0.1 1 10 h V 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio hFE v IC VBE(sat) v IC V V V V V 1.6 1.4 -55°C +25°C +100°C VCE=2V 10 Base-EmitterTurn-OnVoltage VBE(on) 1 DC 1s 100ms 10ms 1ms 100µs - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 hFE V 0.1 Transition Frequency Output Capacitance 1 10 100 fT Cobo ton toff MHz pF ns ns IC=-50mA, VCE=-5V f=50MHz VCB=-10V,f=1MHz IC=-500mA, IB1=-50mA, IB2=-50mA, VCC=-10V 0.01 0.1 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Switching Times VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 248 3 - 249