FZT795A

FZT795A TYPICAL CHARACTERISTICS 1.8 1.6 1.4 IC /IB=40 IC /IB =10 IC /IB=20 Tamb=25°C 1.8 1.6 1.4 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps and very low VCE(sat) APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE – FZT694B PARTMARKING DETAIL – FZT795A FZT795A C -55°C +25°C +100°C +175°C IC /IB =40 E C B VALUE -140 -140 -5 -1 -500 2 -55 to +150 UNIT V V V A mA W °C - (Volts) - (Volts) 1.2 1.0 0.8 0.6 1.2 1.0 0.8 0.6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage 0.01 0.1 1 10 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg V V 0.4 0.2 0 0.001 0.01 0.1 1 10 0.4 0.2 0 0.001 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCE(sat) v IC VCE(sat) v IC 1.6 1.4 +100°C +25°C -55°C VCE=2V 1.6 750 1.4 -55°C +25°C +100°C +175°C IC /IB=10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Breakdown Voltages SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents ICBO IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 300 250 100 100 225 15 100 1900 -0.75 800 -140 -140 -5 -0.1 -0.1 -0.3 -0.3 -0.25 -0.95 V V V µA µA - Typical Gain - Normalised Gain 1.2 1.0 0.8 0.6 0.4 0.2 - (Volts) 1.2 1.0 0.8 0.6 500 IC=-100µ A IC=-10mA* IE=-100µ A VCB=-100V VEB=-4V IC=-100mA, IB=-1mA* IC=-200mA, IB=-5mA* IC=-500mA, IB=-50mA* IC=-500mA, IB=-50mA* IC=-500mA, VCE=-2V* IC=-10mA, VCE=-2V* IC=-200mA, VCE=-2V* IC=-300mA, VCE=-2V* V 250 h 0.4 0.2 h 0 0.01 0.1 1 10 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC V V V V V 1.6 1.4 -55°C +25°C +100°C VCE=2V 1 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 0.1 DC 1s 100ms 10ms 1ms 100µs V 0.01 Transition Frequency Input Capacitance MHz pF pF ns ns IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V 0.001 1 10 100 1000 I+ - Collector Current (Amps) Output Capacitance Switching Times VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 254 3 - 253 FZT795A TYPICAL CHARACTERISTICS 1.8 1.6 1.4 IC /IB=40 IC /IB =10 IC /IB=20 Tamb=25°C 1.8 1.6 1.4 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps and very low VCE(sat) APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE – FZT694B PARTMARKING DETAIL – FZT795A FZT795A C -55°C +25°C +100°C +175°C IC /IB =40 E C B VALUE -140 -140 -5 -1 -500 2 -55 to +150 UNIT V V V A mA W °C - (Volts) - (Volts) 1.2 1.0 0.8 0.6 1.2 1.0 0.8 0.6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage 0.01 0.1 1 10 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg V V 0.4 0.2 0 0.001 0.01 0.1 1 10 0.4 0.2 0 0.001 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCE(sat) v IC VCE(sat) v IC 1.6 1.4 +100°C +25°C -55°C VCE=2V 1.6 750 1.4 -55°C +25°C +100°C +175°C IC /IB=10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Breakdown Voltages SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents ICBO IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 300 250 100 100 225 15 100 1900 -0.75 800 -140 -140 -5 -0.1 -0.1 -0.3 -0.3 -0.25 -0.95 V V V µA µA - Typical Gain - Normalised Gain 1.2 1.0 0.8 0.6 0.4 0.2 - (Volts) 1.2 1.0 0.8 0.6 500 IC=-100µ A IC=-10mA* IE=-100µ A VCB=-100V VEB=-4V IC=-100mA, IB=-1mA* IC=-200mA, IB=-5mA* IC=-500mA, IB=-50mA* IC=-500mA, IB=-50mA* IC=-500mA, VCE=-2V* IC=-10mA, VCE=-2V* IC=-200mA, VCE=-2V* IC=-300mA, VCE=-2V* V 250 h 0.4 0.2 h 0 0.01 0.1 1 10 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC V V V V V 1.6 1.4 -55°C +25°C +100°C VCE=2V 1 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 0.1 DC 1s 100ms 10ms 1ms 100µs V 0.01 Transition Frequency Input Capacitance MHz pF pF ns ns IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V 0.001 1 10 100 1000 I+ - Collector Current (Amps) Output Capacitance Switching Times VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 254 3 - 253