FZT851

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * * * * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps FZT851 FZT853 C E C B PARTMARKING DETAILS COMPLEMENTARY TYPES - DEVICE TYPE IN FULL FZT851 FZT951 FZT853 FZT953 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg FZT851 150 60 6 20 6 3 -55 to +150 FZT853 200 100 6 10 UNIT V V V A A W °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 260 FZT851 ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. 150 150 60 6 TYP. 220 220 85 8 50 1 50 1 10 50 100 170 375 1200 1150 100 100 75 25 200 200 120 50 130 45 45 1100 MAX. UNIT V V V V nA µA nA µA nA mV mV mV mV mV mV CONDITIONS. I C=100 µ A FZT851 TYPICAL CHARACTERISTICS 0.8 1.6 0.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 VCE=5V VCE=1V I C=10mA* I E=100 µ A V CB=120V V CB=120V, T amb=100°C V CB=120V V CB=120V, T amb=100°C V EB=6V I C=0.1A, I B=5mA* I C=1A, I B=50mA* I C=2A, I B=50mA* I C=6A, I B=300mA* I C=6A, I B=300mA* I C =6A, V CE=1V* 200 0.4 IC/IB=10 IC/IB=50 100 0.2 0 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) Collector Cut-Off Current I CER R ≤ 1k Ω I EBO VCE(sat) v IC hFE v IC Emitter Cut-Off Current Collector-Emitter Saturation V CE(sat) Voltage VCE=1V 2.0 2.0 VBE(sat) - (Volts) VBE - (Volts) 1.5 IC/IB=10 IC/IB=50 1.0 1.5 Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times V BE(sat) V BE(on) h FE 1.0 0.5 0.5 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 300 I C=10mA, V CE=1V I C=2A, V CE=1V* I C=5A, V CE=1V* I C=10A, V CE=1V* MHz pF ns ns I C=100mA, V CE=10V f=50MHz V CB=10V, f=1MHz I C=1A, I B1=100mA I B2=100mA, V CC=10V IC - Collector Current (A) 0.001 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC Single Pulse Test Tamb=25 °C 100 VBE(on) v IC fT C obo t on t off 10 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 1 DC 1s 100ms 10ms 1ms 100µs 0.1 0.1 1 10 100 VCE - Collector Voltage (V) Safe Operating Area 3 - 261 3 - 262 hFE - Typical Gain VCE(sat) - (Volts) I C =1 µ A, RB ≤ 1k Ω hFE - Normalised Gain 1.4 300 FZT851 ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. 150 150 60 6 TYP. 220 220 85 8 50 1 50 1 10 50 100 170 375 1200 1150 100 100 75 25 200 200 120 50 130 45 45 1100 MAX. UNIT V V V V nA µA nA µA nA mV mV mV mV mV mV CONDITIONS. I C=100 µ A FZT851 TYPICAL CHARACTERISTICS 0.8 1.6 0.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 VCE=5V VCE=1V I C=10mA* I E=100 µ A V CB=120V V CB=120V, T amb=100°C V CB=120V V CB=120V, T amb=100°C V EB=6V I C=0.1A, I B=5mA* I C=1A, I B=50mA* I C=2A, I B=50mA* I C=6A, I B=300mA* I C=6A, I B=300mA* I C =6A, V CE=1V* 200 0.4 IC/IB=10 IC/IB=50 100 0.2 0 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) Collector Cut-Off Current I CER R ≤ 1k Ω I EBO VCE(sat) v IC hFE v IC Emitter Cut-Off Current Collector-Emitter Saturation V CE(sat) Voltage VCE=1V 2.0 2.0 VBE(sat) - (Volts) VBE - (Volts) 1.5 IC/IB=10 IC/IB=50 1.0 1.5 Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times V BE(sat) V BE(on) h FE 1.0 0.5 0.5 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 300 I C=10mA, V CE=1V I C=2A, V CE=1V* I C=5A, V CE=1V* I C=10A, V CE=1V* MHz pF ns ns I C=100mA, V CE=10V f=50MHz V CB=10V, f=1MHz I C=1A, I B1=100mA I B2=100mA, V CC=10V IC - Collector Current (A) 0.001 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC Single Pulse Test Tamb=25 °C 100 VBE(on) v IC fT C obo t on t off 10 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 1 DC 1s 100ms 10ms 1ms 100µs 0.1 0.1 1 10 100 VCE - Collector Voltage (V) Safe Operating Area 3 - 261 3 - 262 hFE - Typical Gain VCE(sat) - (Volts) I C =1 µ A, RB ≤ 1k Ω hFE - Normalised Gain 1.4 300