FZT855

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak FZT855 C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE FZT855 FZT955 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE 250 150 6 10 5 3 -55 to +150 UNIT V V V A A W °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum 78 FZT855 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. 250 250 150 6 TYP. 375 375 180 8 50 1 50 1 10 20 35 60 260 40 65 110 355 1250 1.1 100 100 15 200 200 30 10 90 22 66 2130 MAX. UNIT V V V V nA A nA A nA mV mV mV mV mV V CONDITIONS. I C=100 A I C =1 A , RB 1 k I C=10mA* I E=100 A V CB=200V V CB=200V, T amb=100°C V CB=200V V CB=200V, T amb=100°C V EB=6V I C=100mA, I B=5mA* I C=500mA, I B=50mA* I C=1A, I B=100mA* I C=5A, I B=500mA* I C=5A, I B=500mA* I C =5A, V CE=5V* I C=10mA, V CE=5V I C=1A, V CE=5V* I C=5A, V CE=5V* I C=10A, V CE=5V* MHz pF ns ns I C==100mA, V CE=10V f=50MHz V CB=10V, f=1MHz I C=1A, I B1=100mA I B2=100mA, V CC=50V Collector Cut-Off Current Emitter Cut-Off Current I EBO Collector-Emitter Saturation V CE(sat) Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times V BE(sat) V BE(on) h FE 300 fT C obo t on t off *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% 78

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 FZT855 TYPICAL CHARACTERISTICS 0.8 1.6 hFE - Normalised Gain 0.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 VCE=5V VCE=10V 200 0.4 IC/IB=10 IC/IB=50 0.2 100 0 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.0 2.0 VCE=5V VBE(sat) - (Volts) 1.5 VBE - (Volts) IC/IB=10 IC/IB=50 1.5 1.0 1.0 0.5 0.001 0.01 0.1 1 10 100 0.5 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Single Pulse Test Tamb=25C 10 IC - Collector Current (A) 1 0.1 DC 1s 100ms 10ms 1ms 100 s 0.01 1 10 100 1000 VCE - Collector Voltage (V) Safe Operating Area 78 hFE - Typical Gain 1.4 300 VCE(sat) - (Volts)