FZT869

FZT869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1kΩ IEBO VCE(sat) 35 67 168 MIN. 60 60 25 6 TYP. 120 120 35 8 50 1 50 1 10 50 110 215 350 1.2 1.13 300 300 200 40 450 450 300 100 100 70 60 680 MHz pF ns ns MAX. UNIT V V V V nA CONDITIONS. IC=100µA IC=1µA, RB ≤1kΩ IC=10mA* IE=100µA VCB=50V VCB=50V, Tamb=100°C VCB=50V VCB=50V, Tamb=100°C VEB=6V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=6.5A, IB=150mA* IC=6.5A, IB=300mA IC=6.5A, VCE=1V* IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz* IC=1A, IB1=100mA IB2=100mA, VCC=10V SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts PARTMARKING DETAILS FZT869 FZT869 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 60 25 6 20 7 3 -55 to +150 UNIT V V V A A W °C µA nA µA nA mV mV mV mV V V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 272 3 - 271 FZT869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1kΩ IEBO VCE(sat) 35 67 168 MIN. 60 60 25 6 TYP. 120 120 35 8 50 1 50 1 10 50 110 215 350 1.2 1.13 300 300 200 40 450 450 300 100 100 70 60 680 MHz pF ns ns MAX. UNIT V V V V nA CONDITIONS. IC=100µA IC=1µA, RB ≤1kΩ IC=10mA* IE=100µA VCB=50V VCB=50V, Tamb=100°C VCB=50V VCB=50V, Tamb=100°C VEB=6V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=6.5A, IB=150mA* IC=6.5A, IB=300mA IC=6.5A, VCE=1V* IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz* IC=1A, IB1=100mA IB2=100mA, VCC=10V SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts PARTMARKING DETAILS FZT869 FZT869 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 60 25 6 20 7 3 -55 to +150 UNIT V V V A A W °C µA nA µA nA mV mV mV mV V V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 272 3 - 271