FZT951

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps * Ptot = 3 watts * FZT951 exhibts extremely low equivalent on resistance; RCE(sat) 55m at 4A COMPLEMENTARY TYPES - FZT951 = FZT851 FZT953 = FZT853 PARTMARKING DETAILS DEVICE TYPE IN FULL FZT951 FZT953 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -15 -5 3 -55 to +150 FZT951 -100 -60 -6 -10 FZT953 -140 -100 UNIT V V V A A W °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
3 - 279 FZT951 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1k IEBO VCE(sat) -20 -85 -155 -370 -1080 -935 100 100 75 10 200 200 90 25 120 74 82 350 MIN. -100 -100 -60 -6 TYP. -140 -140 -90 -8 -50 -1 -50 -1 -10 -50 -140 -210 -460 -1240 -1070 MAX. UNIT V V V V nA A nA A CONDITIONS. IC=-100 A VCE(sat) - (Volts) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 IC/IB=50 IC/IB=10 Tamb=25°C 1.6 -55°C +25°C +175°C FZT951 TYPICAL CHARACTERISTICS IC/IB=10 IC=-10mA* IE=-100 A VCB=-80V VCB=-80V, Tamb=100°C VCB=-80V VCB=-80V, Tamb=100°C VEB=-6V nA mV mV mV mV mV mV hFE - Normalised Gain hFE - Typical Gain 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 100 VBE(sat) - (Volts) IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-5A, IB=-500mA* IC=-5A, IB=-500mA* IC=-5A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-2A, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 300 1.6 1.4 Output Capacitance Switching Times VBE - (Volts) Cobo ton toff pF ns ns 2% VCB=-10V, f=1MHz IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V -55°C +25°C +100°C +175°C VCE=1V IC - Collector Current (Amps) Transition Frequency fT MHz IC=-100mA, VCE=-10V f=50MHz 3 - 280  * Measured under pulsed conditions. Pulse width =300 s. duty cycle Spice parameter data is available upon request for this device   IC=-1 A, RB 1k VCE(sat) - (Volts)
1.4 1.2 1.0 0.8 0.6 0.4 0.2

0.2 0 0.001 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps)

VCE(sat) v IC VCE(sat) v IC
 1.6 1.4 +100°C +25°C -55°C VCE=1V 300 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55°C +25°C +100°C +175°C IC/IB=10 200 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 100 VBE(sat) v IC Single Pulse Test at Tamb=25°C 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 10 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.1 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 281 FZT951 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1k IEBO VCE(sat) -20 -85 -155 -370 -1080 -935 100 100 75 10 200 200 90 25 120 74 82 350 MIN. -100 -100 -60 -6 TYP. -140 -140 -90 -8 -50 -1 -50 -1 -10 -50 -140 -210 -460 -1240 -1070 MAX. UNIT V V V V nA A nA A CONDITIONS. IC=-100 A VCE(sat) - (Volts) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 IC/IB=50 IC/IB=10 Tamb=25°C 1.6 -55°C +25°C +175°C FZT951 TYPICAL CHARACTERISTICS IC/IB=10 IC=-10mA* IE=-100 A VCB=-80V VCB=-80V, Tamb=100°C VCB=-80V VCB=-80V, Tamb=100°C VEB=-6V nA mV mV mV mV mV mV hFE - Normalised Gain hFE - Typical Gain 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 100 VBE(sat) - (Volts) IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-5A, IB=-500mA* IC=-5A, IB=-500mA* IC=-5A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-2A, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 300 1.6 1.4 Output Capacitance Switching Times VBE - (Volts) Cobo ton toff pF ns ns 2% VCB=-10V, f=1MHz IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V -55°C +25°C +100°C +175°C VCE=1V IC - Collector Current (Amps) Transition Frequency fT MHz IC=-100mA, VCE=-10V f=50MHz 3 - 280  * Measured under pulsed conditions. Pulse width =300 s. duty cycle Spice parameter data is available upon request for this device   IC=-1 A, RB 1k VCE(sat) - (Volts)
1.4 1.2 1.0 0.8 0.6 0.4 0.2

0.2 0 0.001 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps)

VCE(sat) v IC VCE(sat) v IC
 1.6 1.4 +100°C +25°C -55°C VCE=1V 300 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55°C +25°C +100°C +175°C IC/IB=10 200 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 100 VBE(sat) v IC Single Pulse Test at Tamb=25°C 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 10 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.1 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 281 FZT953 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1k IEBO VCE(sat) -20 -90 -160 -300 -1010 -925 100 100 50 30 200 200 90 50 15 125 65 110 460 MIN. -140 -140 -100 -6 TYP. -170 -170 -120 -8 -50 -1 -50 -1 -10 -50 -115 -220 -420 -1170 -1160 MAX. UNIT V V V V nA A nA A CONDITIONS. IC=-100 A VCE(sat) - (Volts) FZT953 TYPICAL CHARACTERISTICS 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC/IB=50 IC/IB=10 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 -55°C +25°C +175°C IC=-10mA* IE=-100 A VCB=-100V VCB=-100V, Tamb=100°C VCB=-100V VCB=-100V, Tamb=100°C VEB=-6V nA mV mV mV mV mV mV hFE - Normalised Gain hFE - Typical Gain 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 20 100 200 VBE(sat) - (Volts) IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* IC=-4A, IB=-400mA* IC=-4A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-3A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer VBE(sat) VBE(on) hFE 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VBE - (Volts) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55°C +25°C +100°C +175°C VCE=1V IC - Collector Current (Amps) VCB=-10V, f=1MHz IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 282   IC=-1 A, RB 1k IC - Collector Current (Amps) VCE(sat) - (Volts)
IC/IB=10

IC - Collector Current (Amps)

 VCE(sat) v IC VCE(sat) v IC
 1.6 1.4 +100°C +25°C -55°C VCE=1V 300 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55°C +25°C +100°C +175°C IC/IB=10 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 VBE(sat) v IC Single Pulse Test at Tamb=25°C 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.01 0.1 1 10 20 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 283 FZT953 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1k IEBO VCE(sat) -20 -90 -160 -300 -1010 -925 100 100 50 30 200 200 90 50 15 125 65 110 460 MIN. -140 -140 -100 -6 TYP. -170 -170 -120 -8 -50 -1 -50 -1 -10 -50 -115 -220 -420 -1170 -1160 MAX. UNIT V V V V nA A nA A CONDITIONS. IC=-100 A VCE(sat) - (Volts) FZT953 TYPICAL CHARACTERISTICS 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC/IB=50 IC/IB=10 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 -55°C +25°C +175°C IC=-10mA* IE=-100 A VCB=-100V VCB=-100V, Tamb=100°C VCB=-100V VCB=-100V, Tamb=100°C VEB=-6V nA mV mV mV mV mV mV hFE - Normalised Gain hFE - Typical Gain 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 20 100 200 VBE(sat) - (Volts) IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* IC=-4A, IB=-400mA* IC=-4A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-3A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer VBE(sat) VBE(on) hFE 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VBE - (Volts) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55°C +25°C +100°C +175°C VCE=1V IC - Collector Current (Amps) VCB=-10V, f=1MHz IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 282   IC=-1 A, RB 1k IC - Collector Current (Amps) VCE(sat) - (Volts)
IC/IB=10

IC - Collector Current (Amps)

 VCE(sat) v IC VCE(sat) v IC
 1.6 1.4 +100°C +25°C -55°C VCE=1V 300 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55°C +25°C +100°C +175°C IC/IB=10 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 VBE(sat) v IC Single Pulse Test at Tamb=25°C 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.01 0.1 1 10 20 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 283