FZT968

FZT968 TYPICAL CHARACTERISTICS 0.8 +25 °C SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR ISSUE 3 – OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage PARTMARKING DETAIL – FZT968 FZT968 C 0.8 I+/I*=50 0.6 0.4 I+/I*=250 I+/I*=200 I+/I*=100 I+/I*=50 I+/I*=10 0.6 0.4 +100 °C +25 °C -55 °C E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. -15 -12 -6 TYP. -28 -20 -8 -10 -1.0 -10 -65 -132 -360 -1050 -870 300 300 200 150 450 450 300 240 50 80 161 120 116 -130 -170 -450 -1200 -1050 1000 MAX. VALUE -15 -12 -6 -20 -6 3 -55 to +150 UNIT V V V µA 0.2 0 1m 10m 100m 1 10 100 0.2 0 1m 10m 100m 1 10 100 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current -55 °C +25 °C +100 °C UNIT V V V A A W °C IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC 800 V+-=1V +100 °C VCE(sat) v IC 1.6 1.2 I+/I*=50 Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO 600 400 +25 °C 0.8 -55 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-12V VCB=-12V, Tamb=100°C VEB=-6V IC=-500mA, IB=-5mA* IC=-2A, IB=-50mA* IC=-6A, IB=-250mA* IC=-6A, IB=-250mA* IC=-6A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-500mA, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V 200 0.4 0 10m 100m 1 10 100 1m 10m 100m 1 10 100 0 1m Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE nA nA mV mV mV mV mV IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(sat) v IC 1.4 V+-=1V -55 °C +25 °C +100 °C 100 10 0.7 1 DC 1s 100ms 10ms 1ms 100µs 0 1m 10m 100m 1 10 100 0.1 0.1 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) Transition Frequency Output Capacitance Switching Times fT Cobo ton toff VBE(on) v IC Safe Operating Area 3 - 295 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 294 FZT968 TYPICAL CHARACTERISTICS 0.8 +25 °C SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR ISSUE 3 – OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage PARTMARKING DETAIL – FZT968 FZT968 C 0.8 I+/I*=50 0.6 0.4 I+/I*=250 I+/I*=200 I+/I*=100 I+/I*=50 I+/I*=10 0.6 0.4 +100 °C +25 °C -55 °C E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. -15 -12 -6 TYP. -28 -20 -8 -10 -1.0 -10 -65 -132 -360 -1050 -870 300 300 200 150 450 450 300 240 50 80 161 120 116 -130 -170 -450 -1200 -1050 1000 MAX. VALUE -15 -12 -6 -20 -6 3 -55 to +150 UNIT V V V µA 0.2 0 1m 10m 100m 1 10 100 0.2 0 1m 10m 100m 1 10 100 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current -55 °C +25 °C +100 °C UNIT V V V A A W °C IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC 800 V+-=1V +100 °C VCE(sat) v IC 1.6 1.2 I+/I*=50 Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO 600 400 +25 °C 0.8 -55 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-12V VCB=-12V, Tamb=100°C VEB=-6V IC=-500mA, IB=-5mA* IC=-2A, IB=-50mA* IC=-6A, IB=-250mA* IC=-6A, IB=-250mA* IC=-6A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-500mA, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V 200 0.4 0 10m 100m 1 10 100 1m 10m 100m 1 10 100 0 1m Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE nA nA mV mV mV mV mV IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(sat) v IC 1.4 V+-=1V -55 °C +25 °C +100 °C 100 10 0.7 1 DC 1s 100ms 10ms 1ms 100µs 0 1m 10m 100m 1 10 100 0.1 0.1 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) Transition Frequency Output Capacitance Switching Times fT Cobo ton toff VBE(on) v IC Safe Operating Area 3 - 295 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 294