FZTA42

SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – SEPTEMBER 2007 7 ISSUE 2 – NOVEMBER 93 FEATURES * Suitable for video output stages in TV sets and switch mode power supplies * High breakdown voltage FZTA42 C E COMPLIMENTARY TYPE – FZTA92 PARTMARKING DETAIL – DEVICE TYPE IN FULL C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg VALUE 300 300 5 100 500 2 -55 to +150 UNIT V V V mA mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 300 300 5 0.1 0.1 0.5 0.9 25 40 40 50 6 MHz pF TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=100µ A, IE=0 IC=1mA, IB=0* IE=100µ A, IC=0 VCB=200V, IE=0 VEB=5V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 302 FMPSA42 ZTA42 TYPICAL CHARACTERISTICS hFE Static Forward Current Transfer Ratio fT Transition Frequency (MHz) 160 140 120 100 80 60 40 20 VCE=10V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 – MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit MPSA42 140 120 100 80 60 40 20 0 0.1 VCE=20V C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER 1.0 10 100 E-Line TO92 Compatible SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 300 300 6 500 680 -55 to +175 UNIT V V V mA mW °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range 0.1 1.0 IC-Collector 10 100 200 Current (mA) IC-Collector Current (mA) hFE vs IC VCE (sat) Collector-Emitter Saturation Voltage(Volts) fT vs IC 0.3 1A Single Pulse Test at Tamb=25°C 10ms IC-Collector Current Amps 100ms 0.1 1ms ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 300 300 6 0.1 0.1 0.5 0.9 25 40 40 50 6 MHz pF TYP. MAX. UNIT V V V µA µA 0.2 CONDITIONS. IC=100µ A, IE=0 IC=1mA, IB=0* IE=100µ A, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 IC=20mA, I B=2mA* IC=20mA, I B=2mA* IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz D.C. 0.01 0.1 IC / IB=10 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage 0 0.1 1.0 10 100 200 0.001 1 10 100 1000 IC-Collector Current (mA) VCE-Collector-Emitter Voltage (Volts) Emitter-Base Breakdown Voltage Collector Cut-Off Current VCE(sat) vs IC Safe operating area Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-79 3-78