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GBJ10005

GBJ10005

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    GBJ10005 - 10A GLASS PASSIVATED BRIDGE RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
GBJ10005 数据手册
GBJ10005 - GBJ1010 10A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 170A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 UL Listed Under Recognized Component Index, File Number E94661 GBJ Dim A B L K A B M Min 29.70 19.70 17.00 3.80 7.30 9.80 2.00 0.90 2.30 4.40 3.40 3.10 2.50 0.60 10.80 Max 30.30 20.30 18.00 4.20 7.70 10.20 2.40 1.10 2.70 4.80 3.80 3.40 2.90 0.80 11.20 C D E G Mechanical Data · · · · · · · Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Weight: 6.6 grams (approx.) Marking: Type Number _ J H I S P C R N H I J K L M N P R S D 3.0 X 45° G E E All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current @ TC= 110°C Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element Peak Reverse Current at Rated DC Blocking Voltage I 2t Rating for Fusing (t < 8.3ms) (Note 1) @ IF = 5.0A @TC = 25°C @ TC = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I 2t Cj RqJC Tj, TSTG GBJ 10005 50 35 @ TA = 25°C unless otherwise specified GBJ 1001 100 70 GBJ 1002 200 140 GBJ 1004 400 280 10 170 1.05 10 500 120 55 1.4 -65 to +150 GBJ 1006 600 420 GBJ 1008 800 560 GBJ 1010 1000 700 Unit V V A A V mA A 2s pF °C/W °C Typical Junction Capacitance per Element (Note 2) Typical Thermal Resistance, Junction to Case (Note 3) Operating and Storage Temperature Range Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink. DS21218 Rev. D-2 1 of 2 GBJ10005-GBJ1010 10 8 with heatsink IF, INSTANTANEOUS FORWARD CURRENT (A) 12 10 IO, AVERAGE RECTIFIED CURRENT (A) 1.0 TJ = 25°C 6 4 2 without heatsink Resistive or Inductive load 0.1 Pulse width = 300µs 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.01 0 0.4 0.8 1.2 1.6 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) 180 IFSM, PEAK FWD SURGE CURRENT (A) TJ = 150°C 120 Cj, JUNCTION CAPACITANCE (pF) 160 Single half-sine-wave (JEDEC method) 100 Tj = 25°C f = 1MHz 80 10 40 0 1 10 100 1 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 1000 TJ = 150°C 100 TJ = 125°C TJ = 100°C 10 1.0 TJ = 25°C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS21218 Rev. D-2 2 of 2 GBJ10005-GBJ1010
GBJ10005 价格&库存

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