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GBJ1010

GBJ1010

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    GBJ1010 - 10A GLASS PASSIVATED BRIDGE RECTIFIER - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
GBJ1010 数据手册
GBJ10005 - GBJ1010 10A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 170A Peak Ideal for Printed Circuit Board Applications UL Listed Under Recognized Component Index, File Number E94661 K Lead Free Finish/RoHS Compliant (Note 4) A L M GBJ Dim A B C D E B Min 29.70 19.70 17.00 3.80 7.30 9.80 2.00 0.90 2.30 4.40 3.40 3.10 2.50 0.60 10.80 Max 30.30 20.30 18.00 4.20 7.70 10.20 2.40 1.10 2.70 4.80 3.80 3.40 2.90 0.80 11.20 G S P C R N Mechanical Data · · · · · · · · · · Case: GBJ Case Material: Molded Plastic - UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Tin Finish). Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Marking: Type Number Weight: 6.6 grams (approximate) _ J D H I H I J K L M N P R S 3.0 X 45° G E E All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current @ TC = 110°C Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load Forward Voltage per element Peak Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t < 8.3ms) (Note 1) Typical Total Capacitance per Element (Note 2) Typical Thermal Resistance, Junction to Case (Note 3) Operating and Storage Temperature Range Notes: 1. 2. 3. 4. @ TA = 25°C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2 t CT RqJC Tj, TSTG GBJ 10005 50 35 GBJ 1001 100 70 GBJ 1002 200 140 GBJ 1004 400 280 10 170 1.05 10 500 120 55 1.4 -65 to +150 GBJ 1006 600 420 GBJ 1008 800 560 GBJ 1010 1000 700 Unit V V A A V mA A2 s pF °C/W °C @ IF = 5.0A @TC = 25°C @ TC = 125°C Non-repetitive, for t > 1.0ms and < 8.3ms. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS21218 Rev. 7 - 2 1 of 3 www.diodes.com GBJ10005-GBJ1010 ã Diodes Incorporated 10 with heatsink IF, INSTANTANEOUS FORWARD CURRENT (A) 12 10 IO, AVERAGE RECTIFIED CURRENT (A) 8 1.0 TJ = 25° C 6 4 2 without heatsink Resistive or Inductive load 0.1 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve 0.01 0 0.4 0.8 1.2 1.6 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) IFSM, PEAK FORWARD SURGE CURRENT (A) 180 Single half-sine-wave 100 Tj = 25° C f = 1MHz 160 TJ = 150° C 120 CT, TOTAL CAPACITANCE (pF) 100 10 80 40 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current 1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance, Per Element 1000 TJ = 150° C 100 TJ = 125° C TJ = 100° C 10 1.0 TJ = 25° C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS21218 Rev. 7 - 2 2 of 3 www.diodes.com GBJ10005-GBJ1010 Ordering Information Device GBJ10005-F GBJ1001-F GBJ1002-F GBJ1004-F GBJ1006-F GBJ1008-F GBJ1010-F Notes: (Note 5) Packaging GBJ GBJ GBJ GBJ GBJ GBJ GBJ Shipping 15/Tube 15/Tube 15/Tube 15/Tube 15/Tube 15/Tube 15/Tube 5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf. IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS21218 Rev. 7 - 2 3 of 3 www.diodes.com GBJ10005-GBJ1010
GBJ1010
1. 物料型号: - GBJ10005-F - GBJ1001-F - GBJ1002-F - GBJ1004-F - GBJ1006-F - GBJ1008-F - GBJ1010-F

2. 器件简介: - 10A玻璃钝化桥式整流器,具有玻璃钝化芯片结构,高机箱介电强度1500VRMS,低反向漏电流,承受170A峰值浪涌过载,非常适合印刷电路板应用,UL认证,符合RoHS标准。

3. 引脚分配: - 通过孔安装,适用于#6螺丝安装,最大安装扭矩为5.0英寸磅。

4. 参数特性: - 峰值重复反向电压、工作峰值反向电压、直流阻断电压、RMS反向电压、平均正向整流输出电流、非重复峰值正向浪涌电流、每个元件的正向电压、额定直流阻断电压下的峰值反向电流、12t额定值用于熔断、每个元件的典型总电容、每个元件的典型热阻(结到机箱)、工作和存储温度范围。

5. 功能详解: - 单相、半波、60Hz、电阻性或电感性负载。对于电容器负载,电流降低20%。

6. 应用信息: - 适用于印刷电路板应用。

7. 封装信息: - 封装类型为GBJ,封装材料为模塑塑料,UL阻燃分类等级94V-0,尺寸参数详细列出了各个尺寸的最小值和最大值,无铅镀层(锡镀层),极性在本体上成型。
GBJ1010 价格&库存

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