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GBJ2006

GBJ2006

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    GBJ2006 - 20A GLASS PASSIVATED BRIDGE RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
GBJ2006 数据手册
GBJ20005 - GBJ2010 20A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500V RMS Low Reverse Leakage Current Surge Overload Rating to 240A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 UL Listed Under Recognized Component Index, File Number E94661 GBJ Dim A B Min 29.70 19.70 17.00 3.80 7.30 9.80 2.00 0.90 2.30 4.40 3.40 3.10 2.50 0.60 10.80 Max 30.30 20.30 18.00 4.20 7.70 10.20 2.40 1.10 2.70 4.80 3.80 3.40 2.90 0.80 11.20 L K A B M C D E G _ S P C R N H I J K L M N Mechanical Data · · · · · · · Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Weight: 6.6 grams (approx) Marking: Type Number J H I D 3.0 X 45° G E E P R S All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current @ TC = 110°C Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element @ IF = 10A Peak Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t < 8.3 ms) (Note 1) @ TA = 25°C @ TC = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2t Cj RqJC Tj, TSTG GBJ 20005 50 35 GBJ 2001 100 70 GBJ 2002 200 140 GBJ 2004 400 280 20 240 1.05 10 500 240 60 0.8 -65 to +150 GBJ 2006 600 420 GBJ 2008 800 560 GBJ 2010 1000 700 Unit V V A A V µA A2s pF °C/W °C Typical Junction Capacitance per Element (Note 2) Typical Thermal Resistance Junction to Case (Note 3) Operating and Storage Temperature Range Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink. DS21220 Rev. D-2 1 of 2 GBJ20005-GBJ2010 20 With heatsink IF, INSTANTANEOUS FORWARD CURRENT (A) 25 100 IO, AVERAGE RECTIFIED CURRENT (A) 10 15 1.0 10 5 Without heatsink Resistive or Inductive load 0.1 Tj = 25°C Pulse width = 300µs 0 25 50 75 100 125 150 0.01 0 0.4 0.8 1.2 1.6 2.0 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) IFSM, PEAK FORWARD SURGE CURRENT (A) 2 50 Tj = 25°C 100 Tj = 25°C f = 1MHz 200 150 Cj, JUNCTION CAPACITANCE (pF) Single half-sine-wave (JEDEC method) 10 100 50 0 1 10 100 1 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 1000 100 Tj = 125°C Tj = 100°C 10 1.0 Tj = 50°C Tj = 25°C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS21220 Rev. D-2 2 of 2 GBJ20005-GBJ2010
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