GBJ2010-F

GBJ2010-F

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    GBJ2010-F - 20A GLASS PASSIVATED BRIDGE RECTIFIER - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
GBJ2010-F 数据手册
SPICE MODELS: GBJ20005 GBJ2001 GBJ2002 GBJ2004 GBJ2006 GBJ2008 GBJ2010 GBJ20005 - GBJ2010 20A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 240A Peak Ideal for Printed Circuit Board Applications UL Listed Under Recognized Component Index, File Number E94661 Lead Free Finish/RoHS Compliant (Note 4) Dim A B C D E G GBJ Min 29.70 19.70 17.00 3.80 7.30 9.80 2.00 0.90 2.30 4.40 3.40 3.10 2.50 0.60 10.80 Max 30.30 20.30 18.00 4.20 7.70 10.20 2.40 1.10 2.70 4.80 3.80 3.40 2.90 0.80 11.20 L K A M Mechanical Data · · · · · · · · · · Case: GBJ Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Tin Finish). Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Marking: Type Number Weight: 6.6 grams (approximate) B _ J H I D C S P R N H I J K L M N P R S 3.0 X 45° G E E All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current @ TC = 110°C Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load Forward Voltage per element Peak Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t < 8.3 ms) (Note 1) Typical Total Capacitance per Element (Note 2) Typical Thermal Resistance Junction to Case (Note 3) Operating and Storage Temperature Range @ IF = 10A @ TA = 25°C @ TC = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2 t CT RqJC Tj, TSTG @ TA = 25°C unless otherwise specified GBJ 20005 50 35 GBJ 2001 100 70 GBJ 2002 200 140 GBJ 2004 400 280 20 240 1.05 10 500 240 60 0.8 -55 to +150 GBJ 2006 600 420 GBJ 2008 800 560 GBJ 2010 1000 700 Unit V V A A V µA A2 s pF °C/W °C Notes: 1. 2. 3. 4. Non-repetitive, for t > 1ms and < 8.3 ms. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS21220 Rev. 8 - 2 1 of 3 www.diodes.com GBJ20005-GBJ2010 ã Diodes Incorporated 20 With heatsink IF, INSTANTANEOUS FORWARD CURRENT (A) 25 100 IO, AVERAGE RECTIFIED CURRENT (A) 10 15 1.0 10 5 Without heatsink Resistive or Inductive load 0.1 Tj = 25°C 0 25 50 75 100 125 150 0.01 0 0.4 0.8 1.2 1.6 2.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 250 100 Tj = 25°C Single half-sine-wave IFSM, PEAK FORWARD SURGE CURRENT (A) Tj = 25°C f = 1MHz 200 150 CT, TOTAL CAPACITANCE (pF) 1 10 100 10 100 50 0 1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance, Per Element NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current 1000 Tj = 125°C 100 Tj = 100°C 10 Tj = 50°C 1.0 Tj = 25°C 0.1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS21220 Rev. 8 - 2 2 of 3 www.diodes.com GBJ20005-GBJ2010 Ordering Information (Note 5) Device GBJ20005-F GBJ2001-F GBJ2002-F GBJ2004-F GBJ2006-F GBJ2008-F GBJ2010-F Notes: Packaging GBJ GBJ GBJ GBJ GBJ GBJ GBJ Shipping 15/Tube 15/Tube 15/Tube 15/Tube 15/Tube 15/Tube 15/Tube 5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf. IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS21220 Rev. 8 - 2 3 of 3 www.diodes.com GBJ20005-GBJ2010
GBJ2010-F
物料型号: - GBJ20005 - GBJ2010

器件简介: - 20A玻璃钝化桥式整流器,具有玻璃钝化芯片结构、高外壳介质强度1500VRMS、低反向漏电流、承受240A峰值浪涌电流,非常适合印刷电路板应用,符合UL认证,符合RoHS标准。

引脚分配: - 引脚为镀锡引线,可焊性符合MIL-STD-202, e3方法208。 - 极性:在外壳上成型。

参数特性: - 峰值重复反向电压、工作峰值反向电压、直流阻断电压等参数随不同型号而变化。 - 例如,GBJ20005型号的峰值重复反向电压为50V,而GBJ2010型号为1000V。 - 非重复性峰值正向浪涌电流(8.3ms单半正弦波叠加在额定负载上)对于GBJ2004型号为240A。 - 正向电压在10A时,GBJ20005型号为1.05V。

功能详解: - 该桥式整流器适用于单相60Hz、阻性或感性负载。 - 对于容性负载,需降低20%的电流。 - 提供了正向电流降额曲线、正向特性(每个元件)、最大非重复浪涌电流、每个元件的典型总电容值和反向特性等图表。

应用信息: - 适用于需要高电流和高电压整流的应用场合,如电源、电机驱动等。

封装信息: - 封装类型为GBJ,材料为模塑塑料,UL阻燃分类等级94V-0。 - 引脚镀锡(锡镀层)。 - 通过#6螺钉的通孔安装。 - 最大安装扭矩为5.0 in-lbs。 - 标记为型号编号。 - 重量约为6.6克。 - 工作和储存温度范围为-55至+150°C。
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