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GBJ2502

GBJ2502

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    GBJ2502 - 25A GLASS PASSIVATED BRIDGE RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
GBJ2502 数据手册
GBJ25005 - GBJ2510 25A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500V RMS Low Reverse Leakage Current Surge Overload Rating to 350A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 UL Listed Under Recognized Component Index, File Number E94661 GBJ Dim A B C D E G H I J K L M N P R S Min 29.70 19.70 17.00 3.80 7.30 9.80 2.00 0.90 2.30 4.40 3.40 3.10 2.50 0.60 10.80 Max 30.30 20.30 18.00 4.20 7.70 10.20 2.40 1.10 2.70 4.80 3.80 3.40 2.90 0.80 11.20 L K A B M _ S P C R N Mechanical Data · · · · · · · Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Weight: 6.6 grams (approx) Marking: Type Number J H I D 3.0 X 45° G E E All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current (Note 1) @ TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF = 12.5A Peak Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t < 8.3ms) (Note 1) Typical Junction Capacitance (per element) (Note 2) Typical Thermal Resistance Junction to Case (Note 3) Operating and Storage Temperature Range Notes: @TC = 25°C @ TC = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2t Cj RqJC Tj, TSTG GBJ 25005 50 35 GBJ 2501 100 70 GBJ 2502 200 140 GBJ 2504 400 280 25 350 1.05 10 500 510 85 0.6 -65 to +150 GBJ 2506 600 420 GBJ 2508 800 560 GBJ 2510 1000 700 Unit V V A A V µA A2s pF °C/W °C 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink. DS21221 Rev. D-2 1 of 2 GBJ25005-GBJ2510 IF, INSTANTANEOUS FORWARD CURRENT (A) 30 100 IO, AVERAGE RECTIFIED CURRENT (A) Tj = 25°C 25 20 with heatsink 10 15 1.0 10 5 without heatsink Resistive or Inductive load 0.1 0 25 50 75 100 125 150 0.01 0 0.4 0.8 1.2 Pulse width = 300µs 1.6 2.0 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) 1000 IFSM, PEAK FORWARD SURGE CURRENT (A) 400 Single half-sine-wave (JEDEC method) Tj = 25°C TJ = 25°C f = 1MHz 300 Cj, JUNCTION CAPACITANCE (pF) 100 100 200 10 100 0 1 10 1 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 1000 Tj = 150°C 100 Tj = 125°C Tj = 100°C 10 1.0 Tj = 25°C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS21221 Rev. D-2 2 of 2 GBJ25005-GBJ2510
GBJ2502 价格&库存

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