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GBJ810

GBJ810

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    GBJ810 - 8.0A GLASS PASSIVATED BRIDGE RECTIFIER - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
GBJ810 数据手册
GBJ8005 - GBJ810 8.0A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 170A Peak Ideal for Printed Circuit Board Applications UL Listed Under Recognized Component Index, File Number E94661 K Lead Free Finish/RoHS Compliant (Note 4) Dim A B C D E G GBJ Min 29.70 19.70 17.00 3.80 7.30 9.80 2.00 0.90 2.30 4.40 3.40 3.10 2.50 0.60 10.80 Max 30.30 20.30 18.00 4.20 7.70 10.20 2.40 1.10 2.70 4.80 3.80 3.40 2.90 0.80 11.20 L A M B Mechanical Data · · · · · · · · · · Case: GBJ Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Tin Finish). Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Marking: Type Number Weight: 6.6 grams (approximate) _ J D H I C S P R N H I J K L M N P R S 3.0 X 45° G E E All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current @ TC = 110°C Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load Forward Voltage per element Peak Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t < 8.3ms) (Note 1) Typical Total Capacitance per Element (Note 2) Typical Thermal Resistance Junction to Case (Note 3) Operating and Storage Temperature Range Notes: 1. 2. 3. 4. @ TA = 25°C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2 t CT RqJC Tj, TSTG GBJ 8005 50 35 GBJ 801 100 70 GBJ 802 200 140 GBJ 804 400 280 8.0 170 1.0 5.0 500 120 55 1.6 -65 to +150 GBJ 806 600 420 GBJ 808 800 560 GBJ 810 1000 700 Unit V V A A V mA A2 s pF °C/W °C @ IF = 4.0A @ TC = 25°C @ TC = 125°C Non-repetitive, for t > 1.0ms and < 8.3ms. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS21217 Rev. 7 - 2 1 of 3 www.diodes.com GBJ8005-GBJ810 ã Diodes Incorporated 8 With heatsink IF, INSTANTANEOUS FORWARD CURRENT (A) 10 10 IO, AVERAGE RECTIFIED CURRENT (A) 1.0 6 4 Without heatsink 0.1 2 Resistive or Inductive load Tj = 25° C 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve 0.01 0 0.4 0.8 1.2 1.6 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) IFSM, PEAK FORWARD SURGE CURRENT (A) 180 Single half-sine-wave 100 160 CT, TOTAL CAPACITANCE (pF) Tj = 150° C Tj = 25° C f = 1MHz 120 10 80 40 0 1 100 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current 1000 1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance (per element) 100 Tj = 125° C Tj = 100° C 10 1.0 Tj = 50° C Tj = 25° C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS21217 Rev. 7 - 2 2 of 3 www.diodes.com GBJ8005-GBJ810 Ordering Information Device GBJ8005-F GBJ801-F GBJ802-F GBJ804-F GBJ806-F GBJ808-F GBJ810-F Notes: (Note 5) Packaging GBJ GBJ GBJ GBJ GBJ GBJ GBJ Shipping 15/Tube 15/Tube 15/Tube 15/Tube 15/Tube 15/Tube 15/Tube 5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf. IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS21217 Rev. 7 - 2 3 of 3 www.diodes.com GBJ8005-GBJ810
GBJ810
### 物料型号 - 型号:GBJ8005至GBJ810

### 器件简介 - 描述:8.0A玻璃钝化桥式整流器,具有高耐压、低反向漏电流、承受浪涌过载能力高达170A峰值,适合印刷电路板应用。

### 引脚分配 - 极性:在体上成型 - 安装:通孔,适用于#6螺丝 - 引脚:镀铅,可焊性符合MIL-STD-202标准,采用无铅镀层(锡镀层)。

### 参数特性 - 峰值重复反向电压:50V至1000V不等,具体取决于型号。 - 工作峰值反向电压:50至1000V。 - 直流阻断电压:同上。 - RMS反向电压:35至700V。 - 平均正向整流输出电流:在110°C时,特定型号为8.0A。 - 非重复峰值正向浪涌电流:在特定型号下为170A,8.3ms单半正弦波叠加在额定负载上。 - 正向电压:在4.0A时为1.0V。 - 额定直流阻断电压下的峰值反向电流:在25°C和125°C时为5.0mA至500mA。 - 12t额定值用于熔断:120A2s。 - 典型每个元件的总电容:55pF。 - 典型元件的结到壳热阻:1.6°C/W。

### 功能详解 - 应用:适用于单相、60Hz、电阻性或电感性负载。对于电容器负载,电流需降低20%。 - 浪涌过载额定值:能够承受高达170A的峰值浪涌电流。 - UL认证:符合UL认证,文件编号E94661。 - 无铅/RoHS合规:符合RoHS标准。

### 应用信息 - 应用领域:印刷电路板应用。 - 浪涌过载能力:适合承受高浪涌电流的应用。

### 封装信息 - 封装:GBJ封装,材料为模塑塑料,UL可燃性分类等级94V-0。 - 湿度敏感度:根据J-STD-020C为1级。 - 重量:大约6.6克。 - 标记:型号编号。
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