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GBU1001

GBU1001

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    GBU1001 - 10A GLASS PASSIVATED BRIDGE RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
GBU1001 数据手册
GBU10005 - GBU1010 10A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 220A Peak Ideal for Printed Circuit Board Applications Plastic Material: UL Flammability Classification Rating 94V-0 UL Listed Under Recognized Component Index, File Number E94661 GBU Dim A B Min 21.8 3.5 7.4 1.65 2.25 1.02 4.83 17.5 18.3 3.30 0.46 0.76 Max 22.3 4.1 7.9 2.16 2.75 1.27 5.33 18.0 18.8 3.56 0.56 1.0 A K C M B C D E G L Mechanical Data · · · · · · · Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Marked on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 Inch-pounds Maximum Marking: Date Code and Type Number Weight: 6.6 grams (approx.) J - ~~+ D E F G P N H J K L M N P 3.2 X 45° H All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF = 5.0A Peak Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (Note 2) Typical Junction Capacitance per Element (Note 3) Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range @ TC = 25°C @ TC = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2t CJ RqJC Tj, TSTG GBU 10005 50 35 @ TA = 25°C unless otherwise specified GBU 1001 100 70 GBU 1002 200 140 GBU 1004 400 280 10 220 1.0 5.0 500 200 60 2.2 -55 to +150 GBU 1006 600 420 GBU 1008 800 560 GBU 1010 1000 700 Unit V V A A V mA A2s pF °C/W °C Notes: 1. United mounted on 100 x 100 x 1.6mm copper plate heatsink. 2. Non-repetitive, for t > 1.0ms and < 8.3ms. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS30052 Rev. D-2 1 of 2 GBU10005 - GBU1010 10 I(AV), AVG FWD OUTPUT CURRENT (A) 8 IF, INSTANTANEOUS FWD CURRENT (A) Resistive or Inductive Load 100 6 10 Tj = 25°C 4 1.0 2 0 0 50 100 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.1 Pulse width = 300µs 0 0.2 0.6 1.0 1.4 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 250 1000 IFSM, PEAK FWD SURGE CURRENT (A) Tj = 25°C f = 1.0MHz 200 Single Half-Sine Wave (JEDEC Method) 150 Cj, JUNCTION CAPACITANCE (pF) 100 100 50 Tj = 25°C 0 1 10 100 10 0.1 1.0 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance DS30052 Rev. D-2 2 of 2 GBU10005 - GBU1010
GBU1001 价格&库存

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