HBDM60V600W-7

Lead-free Green HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER NEW PRODUCT Features · · · Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 6 5 4 Mechanical Data · · · · · · · · Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Fig. 2 Terminals: Finish ¾ Matte Tin Finish annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 7 Ordering Information: See Page 7 Weight: 0.016 grams (approximate) Q1 MMBT2907A 1 2 3 Fig. 1: SOT-363 CQ1 EQ1 EQ2 Q2 MMBTA06 BQ1 BQ2 CQ2 Sub-Component P/N MMBT2907A_DIE MMBTA06_DIE Reference Q1 Q2 Device Type PNP Transistor NPN Transistor Figure 2 2 Fig. 2: Schematic & Pin Configuration Maximum Ratings: Total Device Characteristic Power Dissipation (Note 3) @ TA = 25°C unless otherwise specified Symbol Pd RqJA VEBO Value 200 625 -55 to +150 Unit mW °C/W °C Thermal Resistance, Junction to Ambient Air (Note 3) Operating and Storage Junction Temperature Range Maximum Ratings: Sub-Component Devices Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Notes: @ TA = 25°C unless otherwise specified Q1-PNP Transistor (MMBT2907A) -60 -60 -5.5 -600 Q2-NPN Transistor (MMBTA06) 80 65 6 500 Unit V V V mA Symbol VCBO VCEO VEBO IC 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 8 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30701 Rev. 2 - 2 1 of 8 www.diodes.com HBDM60V600W ã Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified PNP (MMBT2907A) Transistor (Q1): Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) 100 100 100 100 50 ¾ ¾ ¾ ¾ ¾ 300 ¾ -0.3 -0.5 -0.95 -01.3 ¾ ¾ ¾ ¾ ¾ V V IC = -100mA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL -60 -60 -5.5 ¾ ¾ ¾ ¾ ¾ ¾ -10 -50 -50 V V V nA nA nA IC = -10mA, IE = 0 IC = -10mA, IB = 0 IE = -10mA, IC = 0 VCB = -50V, IE = 0 VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V Symbol Min Max Unit Test Condition DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time VCE(SAT) VBE(SAT) fT 100 ¾ MHz VCE = 2.0V, IC = 10mA, f = 100MHz ton td tr toff ts tr ¾ ¾ ¾ ¾ ¾ ¾ 45 10 40 100 80 30 ns ns ns ns ns ns ¾ VCE = -30V, IC = -150mA, IB1 = IB2 = -15mA ¾ VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA @ TA = 25°C unless otherwise specified Electrical Characteristics NPN (MMBTA06) Transistor (Q2): Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector Cutoff Current Collector-Emitter Cutoff Current, IO(OFF) Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: Symbol Min Typ Max Unit Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES ICEO IEBO 80 65 6 ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ 100 100 100 100 V V V nA nA nA nA IC = 100mA, IE = 0 IC = 1mA, IB = 0 IE = 100mA, IC = 0 VCB = 80V, IE = 0 VCE = 90V, VBE = 0 VCE = 30V, IB = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA IC = 100mA, IB = 5mA hFE VCE(SAT) VBE(ON) VBE(SAT) 250 100 ¾ 0.7 ¾ ¾ ¾ 0.2 0.75 ¾ ¾ ¾ 0.4 0.8 0.95 ¾ ¾ V V V fT 100 ¾ ¾ MHz VCE = 20V, IC = 10mA, f = 100MHz 4. Short duration pulse test used to minimize self-heating effect. DS30701 Rev. 2 - 2 2 of 8 www.diodes.com HBDM60V600W Typical Characteristics @ Tamb = 25°C unless otherwise specified NEW PRODUCT 200 PD, POWER DISSIPATION (mW) 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Derating Curve PNP (MMBT2907A) Transistor (Q1) Plots: 30 20 C, CAPACITANCE (pF) Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 4 Typical Capacitance DS30701 Rev. 2 - 2 3 of 8 www.diodes.com HBDM60V600W VCE COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 1mA IC = 10mA IC = 100mA IC = 30mA IC = 300mA NEW PRODUCT 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 5 Typical Collector Saturation Region 0.6 IC = 10 IB 1000 VCE = 5V TA = 150°C VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.5 0.4 hFE, DC CURRENT GAIN 100 TA = 25°C TA = -50°C 0.3 TA = 150°C TA = 25°C 0.2 10 0.1 TA = -50°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6 Collector Emitter Saturation Voltage vs. Collector Current 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 TA = 25°C 0.5 0.4 0.3 0.2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Base Emitter Voltage vs. Collector Current TA = 150°C TA = -50°C 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 7 DC Current Gain vs Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V VCE = 5V 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 9 Gain Bandwidth Product vs. Collector Current 100 DS30701 Rev. 2 - 2 4 of 8 www.diodes.com HBDM60V600W NPN (MMBTA06) Transistor (Q2) Plots: 10 NEW PRODUCT ICBO, COLLECTOR-BASE CURRENT (nA) VCB = 80V 1 0.1 0.01 25 50 75 100 125 TA, AMBIENT TEMPERATURE (ºC) Fig. 10 Typical Collector-Cutoff Current vs. Ambient Temperature 2.0 VCE, COLLECTOR EMITTER VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 30mA IC = 10mA IC = 100mA IC = 1mA 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 11 Typical Collector Saturation Region 0.500 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.450 0.400 0.350 0.300 0.250 0.200 0.150 0.100 0.050 0 1 10 100 TA = -50°C 1000 TA = 150°C TA = 25°C IC IB = 10 10000 VCE = 5V hFE, DC CURRENT GAIN 1000 TA = 150°C 100 TA = -50°C TA = 25°C 10 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 13 DC Current Gain vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 12 Collector Emitter Saturation Voltage vs. Collector Current DS30701 Rev. 2 - 2 5 of 8 www.diodes.com HBDM60V600W 1.0 1000 NEW PRODUCT VBE(ON), BASE EMITTER VOLTAGE (V) 0.8 TA = -50°C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 14 Base Emitter Voltage vs Collector Current TA = 150°C TA = 25°C fT, GAIN BANDWIDTH PRODUCT (MHz) 0.9 VCE = 5V VCE = 5V 100 10 1 1 IC, COLLECTOR CURRENT (mA) Fig. 15 Gain Bandwidth Product vs Collector Current 10 Circuit Schematic along with Application Example: 9V-12V HBDM60V600W R1 EQ1 36 HBDM60V600W MMBT2907A Q1 R3 BQ1 CQ1 Q3 Half H-Bridge R5 1k CQ2 M M B TA 0 6 Q2 BQ2 EQ2 D3 C2 D1 0 C1 D2 Q1 MMBT2907A BQ1 CQ1 R4 Q4 Motor Half H-Bridge CQ2 M M B TA 0 6 D4 Q2 BQ2 R8 1k Forward 0 Reverse Fig. 16 Note: D1, D2, D3, D4: Switching Diodes (MMBD4448) Q3, Q4: NPN Transistors (MMBTA06) DS30701 Rev. 2 - 2 6 of 8 www.diodes.com HBDM60V600W NEW PRODUCT Application Example Schematic: (with Package Pinouts) 9V-12V R1 36 U1 A1 NC C2 1 2 3 6 5 4 C1 NC C1 R2 33k R3 A2 U2 BQ1 BQ2 1 2 3 6 5 4 CQ1 EQ1 EQ2 470 U3 EQ1 BQ2 1 CQ2 2 3 MMBD4448DW U4 BQ1 R4 470 BQ2 CQ2 1 2 6 CQ1 EQ1 C2 Motor CQ2 CQ1 6 BQ1 5 EQ2 4 5 HBDM60V600W R5 C1 6 C2 5 C3 4 1k INV5V0W EQ2 3 4 HBDM60V600W Q1 R6 1k U5 A1 1 A2 2 A3 3 MMBD4448HTW Reverse Forward Control Input 5V/0V Fig. 17 Ordering Information Device (Note 5) Packaging HB01 Shipping 3000/Tape & Reel HBDM60V600W-7 Notes: 5. For Packaging Details, please go to page 8 or our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information HB01 Fig. 18 Date Code Key Year Code Month Code 2006 T Jan 1 Feb 2 HB01 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2007 U March 3 YM 2008 V Apr 4 May 5 2009 W Jun 6 Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D DS30701 Rev. 2 - 2 7 of 8 www.diodes.com HBDM60V600W Mechanical Details NEW PRODUCT SOT-363 A Dim A B BC Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° C D F 0.65 Nominal G H K M H J K L M a J D F L All Dimensions in mm Fig. 19 Suggested Pad Layout: (Based on IPC-SM-782) Figure 20 Dimensions Z G X Y C E SOT-363* 2.5 1.3 0.42 0.6 1.9 0.65 Fig. 20 * Typical dimensions in mm IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30701 Rev. 2 - 2 8 of 8 www.diodes.com HBDM60V600W