HBDM60V600W

HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Please click here to visit our online spice models database. Features • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Sub-Component P/N MMBT2907A_DIE MMBTA06_DIE Reference Q1 Q2 Device Type PNP Transistor NPN Transistor Mechanical Data • • • • • • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Schematic & Pin Configuration Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.016 grams (approximate) CQ1 EQ1 EQ2 Q1 MMBT2907A MMBTA06 Q2 Top View BQ1 BQ2 CQ2 Device Schematic Maximum Ratings: Total Device Characteristic Operating and Storage Junction Temperature Range @TA = 25°C unless otherwise specified Symbol VEBO Value -55 to +150 Unit °C Thermal Characteristics: Total Device Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Air (Note 3) Symbol PD RθJA Value 200 625 Unit mW °C/W Maximum Ratings: Sub-Component Devices Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Notes: @TA = 25°C unless otherwise specified Q1-PNP Transistor (MMBT2907A) -60 -60 -5.5 -600 Q2-NPN Transistor (MMBTA06) 80 65 6 500 Unit V V V mA Symbol VCBO VCEO VEBO IC 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. HBDM60V600W Document number: DS30701 Rev. 5 - 2 1 of 7 www.diodes.com July 2008 © Diodes Incorporated HBDM60V600W Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1) Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL Min -60 -60 -5.5 ⎯ ⎯ ⎯ 100 100 100 100 50 ⎯ ⎯ Max ⎯ ⎯ ⎯ -10 -50 -50 ⎯ ⎯ ⎯ 300 ⎯ -0.3 -0.5 -0.95 -1.3 ⎯ 45 10 40 100 80 30 @TA = 25°C unless otherwise specified Unit V V V nA nA nA ⎯ ⎯ ⎯ ⎯ ⎯ V V Test Condition IC = -10μA, IE = 0 IC = -10mA, IB = 0 IE = -10μA, IC = 0 VCB = -50V, IE = 0 VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V IC = -100μA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCE = -2.0V, IC = -10mA, f = 100MHz VCE = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time VCE(SAT) VBE(SAT) fT ton td tr toff ts tr 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ MHz ns ns ns ns ns ns Electrical Characteristics: NPN (MMBTA06) Transistor (Q2) Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: 4. Short duration pulse test used to minimize self-heating effect. @TA = 25°C unless otherwise specified Max ⎯ ⎯ ⎯ 100 100 100 ⎯ ⎯ 0.4 0.8 0.95 ⎯ Unit V V V nA nA nA ⎯ ⎯ V V V MHz Test Condition IC = 100μA, IE = 0 IC = 1mA, IB = 0 IE = 100μA, IC = 0 VCB = 80V, IE = 0 VCE = 90V, VBE = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA IC = 100mA, IB = 5mA VCE = 20V, IC = 10mA, f = 100MHz Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO hFE VCE(SAT) VBE(ON) VBE(SAT) fT Min 80 65 6 ⎯ ⎯ ⎯ 250 100 ⎯ 0.7 ⎯ 100 Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.2 0.75 ⎯ ⎯ HBDM60V600W Document number: DS30701 Rev. 5 - 2 2 of 7 www.diodes.com July 2008 © Diodes Incorporated HBDM60V600W Typical Characteristics 200 @TA = 25°C unless otherwise specified PD, POWER DISSIPATION (mW) 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 200 PNP (MMBT2907A) Transistor (Q1) Plots: 30 -VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 1mA IC = 10mA IC = 100mA IC = 30mA IC = 300mA 20 C, CAPACITANCE (pF) 10 Cibo 5.0 Cobo 1.0 0.1 1.0 10 REVERSE VOLTAGE (V) Fig. 2 Typical Capacitance IC IB = 10 30 1 0.1 10 100 -IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region 0.01 0.6 -VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1,000 VCE = 5V 0.5 TA = 150°C 0.4 hFE, DC CURRENT GAIN 100 TA = 25°C TA = -50°C 0.3 TA = 150°C 0.2 TA = 25°C 10 0.1 TA = -50°C 10 1,000 100 -IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current 0 1 1 1 1,000 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current July 2008 © Diodes Incorporated HBDM60V600W Document number: DS30701 Rev. 5 - 2 3 of 7 www.diodes.com HBDM60V600W 1.0 -VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) 0.9 0.8 0.7 0.6 TA = 25°C TA = -50°C 100 0.5 0.4 0.3 0.2 0.1 T A = 150°C 10 1 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain Bandwidth Product vs. Collector Current 1 1 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base Emitter Voltage vs. Collector Current NPN (MMBTA06) Transistor (Q2) Plots 10 ICBO, COLLECTOR-BASE CURRENT (nA) 2.0 VCE, COLLECTOR EMITTER VOLTAGE (V) 1.8 1.6 1.4 1.2 IC = 10mA IC = 30mA 1 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 1mA IC = 100mA 0.1 50 75 100 125 TA, AMBIENT TEMPERATURE (ºC) Fig. 8 Typical Collector-Cutoff Current vs. Ambient Temperature 0.01 25 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 9 Typical Collector Saturation Region 0.01 0.500 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.450 0.400 IC IB = 10 10,000 hFE, DC CURRENT GAIN TA = -50°C 1,000 0.350 0.300 TA = 25°C 0.250 0.200 0.150 0.100 0.050 0 1 T A = 150°C 100 10 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical Collector Emitter Saturation Voltage vs. Collector Current 1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 11 Typical DC Current Gain vs. Collector Current HBDM60V600W Document number: DS30701 Rev. 5 - 2 4 of 7 www.diodes.com July 2008 © Diodes Incorporated HBDM60V600W 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Base Emitter Voltage vs. Collector Current 0.1 0.1 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) 9V-12V 100 10 10 IC, COLLECTOR CURRENT (mA) Fig. 13 Typical Gain Bandwidth Product vs. Collector Current 1 1 Current Schematic along with Application Example: HBDM60V600W R1 EQ1 36 HBDM60V600W MMBT2907A Q1 R3 BQ1 CQ1 Q3 Half H-Bridge R5 1k CQ2 M MB TA0 6 Q2 BQ2 EQ2 D3 C2 D1 0 C1 D2 Q1 MMBT2907A BQ1 CQ1 R4 Q4 Motor Half H-Bridge CQ2 M MB TA0 6 D4 Q2 BQ2 R8 1k Forward 0 Reverse Note: D1, D2, D3, D4: Switching Diodes (MMBD4448) Q3, Q4: NPN Transistors (MMBTA06) HBDM60V600W Document number: DS30701 Rev. 5 - 2 5 of 7 www.diodes.com July 2008 © Diodes Incorporated HBDM60V600W HBDM60V600 Application Example Schematic: (with Package Pinouts) 9V-12V R1 36 U1 A1 NC C2 1 2 3 6 5 4 C1 NC C1 R2 33k R3 A2 U2 BQ1 BQ2 1 2 3 6 5 4 CQ1 EQ1 EQ2 470 U3 EQ1 BQ2 1 CQ2 2 3 MMBD4448DW U4 BQ1 R4 470 BQ2 CQ2 1 2 6 CQ1 EQ1 C2 Motor CQ2 CQ1 6 BQ1 5 EQ2 4 5 HBDM60V600W R5 INV5V0W EQ2 3 4 HBDM60V600W Q1 R6 1k U5 A1 1 A2 2 A3 3 6 5 4 C1 C2 C3 1k MMBD4448HTW Reverse Forward Control Input 5V/0V Ordering Information Part Number HBDM60V600W-7 Notes: (Note 5) Case SOT-363 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information HB01 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) HB01 Date Code Key Year Code Month Code 2006 T Jan 1 2007 U Feb 2 Mar 3 2008 V Apr 4 2009 W May 5 YM 2010 X Jun 6 2011 Y Jul 7 2012 Z Aug 8 Sep 9 2013 A Oct O 2014 B Nov N 2015 C Dec D HBDM60V600W Document number: DS30701 Rev. 5 - 2 6 of 7 www.diodes.com July 2008 © Diodes Incorporated HBDM60V600W Package Outline Dimensions A BC H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm Suggested Pad Layout E E Z G C Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. HBDM60V600W Document number: DS30701 Rev. 5 - 2 7 of 7 www.diodes.com July 2008 © Diodes Incorporated