LBN150B01-7

LBN150B01 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS General Description N EW PRODUCT • LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete PNP pass transistor with stable Vce_sat which does not depend on the input voltage and can support maximum continuous current of 150 mA up to 125 °C (see fig. 3). It also contains a discrete NPN that can be used as a control. The component devices can be used as a part of a circuit or as stand alone discrete devices. 6 5 4 1 2 3 Fig. 1: SOT-26 CQ1 6 Features • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) EQ2 5 CQ2 4 Mechanical Data • • • • • • • • Case: SOT-26 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL- STD -202, Method 208 Marking & Type Code Information: See Page 8 Ordering Information: See Page 8 Weight: 0.016 grams (approximate) NPN_MMST3904 Q1 PNP_MMST3906 Q2 1 2 3 EQ1 BQ1 BQ2 Fig. 2: Schematic and Pin Configuration Sub-Component P/N MMST3906 MMST3904 Reference Q1 Q2 Device Type PNP Transistor NPN Transistor Figure 2 2 Maximum Ratings, Total Device Characteristic Output Current @TA = 25°C unless otherwise specified Symbol Iout Value 150 Unit mA Thermal Characteristics @TA = 25°C unless otherwise specified Symbol Pd Pder Tj,Tstg RθJA Value 300 2.33 -55 to +150 417 Unit mW mW/°C °C °C/W Characteristic Power Dissipation (Note 3) Power Derating Factor above 120 °C Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor) Notes: 1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Page 9. DS30749 Rev. 3 - 2 1 of 9 www.diodes.com LBN150B01 © Diodes Incorporated Maximum Ratings: @TA = 25°C unless otherwise specified Sub-Component Device - Discrete PNP Transistor (Q1) N EW PRODUCT Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Output Current - continuous (Note 4) Symbol VCBO VCEO VEBO IC Value -40 -40 -6 -200 Unit V V V mA Maximum Ratings: @TA = 25°C unless otherwise specified Sub-Component Device - Discrete NPN Transistor (Q2) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Output Current - continuous (Note 4) Notes: 4. Short duration pulse test used to minimize self-heating effect. Symbol VCBO VCEO VEBO IC Value 60 40 6 200 Unit V V V mA DS30749 Rev. 3 - 2 2 of 9 www.diodes.com LBN150B01 © Diodes Incorporated Electrical Characteristics: Discrete PNP Transistor (Q1) Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Symbol VCBO VCEO VEBO ICEX IBL ICBO ICEO IEBO Min -40 -40 -6 ⎯ ⎯ ⎯ ⎯ ⎯ 105 110 DC Current Gain hFE 120 90 32 10 ⎯ Collector-Emitter Saturation Voltage Equivalent on-resistance Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) RCE(SAT) VBE(ON) VBE(SAT) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2 0.1 100 3 250 ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ -50 -50 -50 -50 -50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.08 -0.15 -0.5 2.5 -0.92 -0.95 -1.1 4 8 12 10 400 60 ⎯ 4 35 35 225 75 @TA = 25°C unless otherwise specified Unit V V V nA nA nA nA nA ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ V Ω V V Test Condition IC = -10uA, IE = 0 IC = -1.0mA, IB = 0 B N EW PRODUCT Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current ON CHARACTERISTICS (Note 4) IE = -10μA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V VCB = -30V, IE = 0 VCE = -30V, IB = 0 B VEB = -5V, IC = 0 VCE = -1V, IC = -100 μA VCE = -1V, IC = -1 mA VCE = -1V, IC = -10 mA VCE = -1V, IC = -50 mA VCE = -1V, IC = -100 mA VCE = -1V, IC = -200 mA IC = - 10 mA, IB = -1 mA B IC = -50mA, IB = -5mA IC = -200mA, IB = -20mA IC = -200mA, IB = -20mA B VCE = -5V, IC = -200mA IC = -10mA, IB = -1mA B IC = -50mA, IB = -5mA B COBO CIBO hIE hRE hFE hOE fT NF pF pF KΩ x 10E-4 ⎯ μS MHz dB ns ns ns ns VCB = -5.0 V, f = 1.0 MHz, IE = 0 VEB = -5.0 V, f = 1.0 MHz, IC = 0 VCE = 1.0V, Ic = 10mA, f = 1.0 KHz VCE = - 20V, IC = -10mA, f = 100 MHz VCE = - 5V, Ic = -100 uA, Rs = 1Ω, f =1 KHz VCC = -3.0 V, IC = -10 mA, VBE(OFF) = 0.5V, IB1 = -1.0 mA VCC = -3.0 V, IC = -10 mA, IB1 = IB2 = -1.0 mA td tr ts tf DS30749 Rev. 3 - 2 3 of 9 www.diodes.com LBN150B01 © Diodes Incorporated Electrical Characteristics: Discrete NPN Transistor (Q2) Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Symbol VCBO VCEO VEBO ICEX IBL ICBO ICEO IEBO Min 60 40 6 ⎯ ⎯ ⎯ ⎯ ⎯ 150 170 DC Current Gain hFE 160 70 30 12 ⎯ Collector-Emitter Saturation Voltage Equivalent on-resistance Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time VCE(SAT) RCE(SAT) VBE(ON) VBE(SAT) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2 0.1 100 3 250 ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 50 50 50 50 50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.08 0.16 0.36 1.8 0.98 0.95 1.1 4 8 12 10 400 60 ⎯ 4 35 35 @TA = 25°C unless otherwise specified Unit V V V nA nA nA nA nA ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ V Ω V V Test Condition IC = 10uA, IE = 0 IC = 1.0mA, IB = 0 B N EW PRODUCT Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current ON CHARACTERISTICS (Note 4) IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V VCB = 30V, IE = 0 VCE = 30V, IB = 0 B VEB = 5V, IC = 0 VCE = 1V, IC = 100 μA VCE = 1V, IC = 1 mA VCE = 1V, IC = 10 mA VCE = 1V, IC = 50 mA VCE = 1V, IC = 100 mA VCE = 1V, IC = 200 mA IC = 10 mA, IB = 1 mA B IC = 50mA, IB = 5mA IC = 200mA, IB = 20mA IC = 200mA, IB = 20mA B VCE = 5V, IC = 200mA IC = 10mA, IB = 1mA B IC = 50mA, IB = 5mA B COBO CIBO hIE hRE hFE hOE fT NF pF pF KΩ x 10E-4 ⎯ μS MHz dB ns ns VCB = 5.0 V, f = 1.0 MHz, IE = 0 VEB = 5.0 V, f = 1.0 MHz, IC = 0 VCE = 1.0V, Ic = 10mA, f = 1.0 KHz VCE = 20V, IC = 0mA, f = 100 MHz VCE = 5V, Ic = 100 uA, Rs = 1Ω, f =1 KHz VCC = -3.0 V, IC = 10 mA, VBE(OFF) = 0.5V, IB1 = 1.0 mA td tr Typical Characteristics 350 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 3, Max Power Dissipation vs Ambient Temperature DS30749 Rev. 3 - 2 4 of 9 www.diodes.com LBN150B01 © Diodes Incorporated Characteristics of PNP Transistor (Q1): 10,000 200 hFE,, DC CURRENT GAIN 1,000 TA = 150°C TA = 125°C 100 TA = 85°C TA = 25°C TA = -55°C IC, COLLECTOR CURRENT (mA) N EW PRODUCT 150 100 10 50 1 0.1 0 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, hFE vs IC 1000 0 6 8 2 4 10 VCE, COLLECTOR - EMITTER VOLTAGE (V) Fig. 5, IC vs VCE 100 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1.4 VBE, BASE-EMITTER VOLTAGE (V) 1.2 1 TA = 25°C 0.8 0.6 0.4 0.2 0 TA = 125°C TA = 150°C TA = -55°C 10 TA = 150°C TA = 125°C 1 0.1 TA = 85°C TA = 85°C TA = -55°C TA = 25°C 0.01 0.1 1 10 100 1000 0.1 IC, COLLECTOR CURRENT (mA) Fig. 6, VCE(SAT) vs IC 1.4 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 1 0.8 0.6 0.4 0.2 TA = 125°C TA = -55°C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, VBE vs IC 1000 15 CIBO/COBO, CAPACITANCE (pF) 12 9 TA = 150°C 6 CIBO 3 COBO 0 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8, VBE (SAT) vs IC 1 10 12 14 16 18 VR, REVERSE VOLTAGE (V) Fig. 9, Input/Output Capacitance vs VR 20 DS30749 Rev. 3 - 2 5 of 9 www.diodes.com LBN150B01 © Diodes Incorporated Characteristics of NPN Transistor (Q2): 10,000 Vce = 1V TA = 150°C IB = 5mA 200 IB = 4.5mA IB = 4mA IB = 3.5mA IB = 3mA N EW PRODUCT hFE, DC CURRENT GAIN 1,000 TA = 125° C IC, COLLECTOR CURRENT (mA) 150 100 TA = 85°C TA = 25°C T A = -55°C 100 10 50 IB = 0.5mA IB = 1mA IB = 1.5mA IB = 2mA IB = 2.5mA 1 0.1 1 10 100 1000 0 0 2 4 6 8 10 IC, COLLECTOR CURRENT (mA) Fig. 10, hFE vs IC VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 100 Ic/Ib = 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 11, IC vs VCE 1.4 Vce = 1V 10 VBE, BASE-EMITTER VOLTAGE (V) 1.2 1 TA = -55°C 0.8 0.6 T A = 25°C 1 TA = 125°C TA = 150° C TA = 85° C T A = 85 °C 0.1 TA = -55°C TA = 25°C 0.4 TA = 125°C 0.2 0 TA = 150° C 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 12, VCE(SAT) vs IC 1.4 Vce = 1V IC, COLLECTOR CURRENT (mA) Fig. 13, VBE vs IC 6 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 1 0.8 0.6 TA = 125°C TA = -55°C CIBO/COBO, CAPACITANCE (pF) 5 4 TA = 25°C TA = 150° C 3 CIBO 0.4 0.2 0 0.1 TA = 85° C 2 COBO 1 10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 14, VBE vs IC 1000 10 12 14 16 18 VR, REVERSE VOLTAGE (V) Fig. 15, Input/Output Capacitance vs VR 20 DS30749 Rev. 3 - 2 6 of 9 www.diodes.com LBN150B01 © Diodes Incorporated Application Details • PNP Transistor (MMST3906) and NPN Transistor (MMST3904) integrated as one in LBN150B01 can be used as a discrete entity for general purpose applications or as a part of a circuit to function as a Load Switch. When it is used as the latter as shown in Fig 16, various input voltage sources can be used as long as they do not exceed the maximum rating of the device. These devices are designed to deliver continuous output load current up to maximum of 150 mA. The use of the NPN as a switch eliminates the need for higher current required to overcome the gate charge in the event an N-MOSFET is used. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provides power on demand and also consume less space. It mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 17 for one example of typical application circuit used in conjunction with a voltage regulator as a part of power management system). MMST3906 Vin EQ1 Q1 CQ1 PNP BQ1 Vo ut R1 10K LOAD N EW PRODUCT R2 220 MMST3904 CQ2 Q2 EQ2 NPN Control BQ2 Fig. 16: Example Circuit Schematic Typical Application Circuit 5VSupply U1 U3 Load Switch Vin Vin U2 1 E_Q1 2 B_Q1 B_Q2 C_Q1 6 Vo u t IN OUT Point of Load Control Logic Circuit (PIC, Comparator, etc) GND E_Q2 C_Q2 5 GND 4 Control OUT1 3 LBN150B01 Diodes, Inc. Voltage Regulator Fig. 17 DS30749 Rev. 3 - 2 7 of 9 www.diodes.com LBN150B01 © Diodes Incorporated Ordering Information (Note 5) N EW PRODUCT Device LBN150B01-7 Notes: 5. Marking Code PM4 Packaging SOT-26 Shipping 3000/Tape & Reel For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PM4 PM4 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Fig. 18 Date Code Key Year Code Month Code 2006 T Jan 1 Feb 2 2007 U Mar 3 Apr 4 2008 V May 5 Jun 6 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D Marking Information A YM SOT-26 Dim A BC Min 0.35 1.50 2.70 – – 2.90 0.013 1.00 0.35 0.10 0° Max 0.50 1.70 3.00 – – 3.10 0.10 1.30 0.55 0.20 8° Typ 0.38 1.60 2.80 0.95 0.55 3.00 0.05 1.10 0.40 0.15 – B C D H F K M H J K L M α J D F L Fig. 19 All Dimensions in mm DS30749 Rev. 3 - 2 8 of 9 www.diodes.com LBN150B01 © Diodes Incorporated Suggested Pad Layout: (Based on IPC-SM-782) E E N EW PRODUCT Figure 20 Dimensions Z G X Y C E SOT-26 3.2 1.6 0.55 0.8 2.4 0.95 Z G C All Dimensions in mm Y X Fig. 20 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30749 Rev. 3 - 2 9 of 9 www.diodes.com LBN150B01 © Diodes Incorporated